TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

Abstract

A trench insulated gate bipolar transistor (TIGBT) with emitterembedded gate is proposed. The emitter-embedded gate could increase the gate-to-emitter capacitance C GE without affecting the miller capacitance C GC. Therefore, the ratio of C GC to C GE is significantly reduced, which suppresses the gate self-charging effect effectively. As a result, an excellent controllability on the turn-on dI CE /dt of the TIGBT and the dV KA /dt of the freewheeling diode (FWD) is obtained. The simulation results based on a 1.2 kV TIGBT show that, in comparison with the conventional TIGBT, the lower limit of the reverse-recovery dV KA /dt of the FWD can be reduced by 91.2% and the turn-on loss could be reduced by 53.1% under the same dV KA /dt.

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

“…1(f) shows the simplified equivalent circuit of the proposed SIGBT. When the Gate turns to 15V, the P-well will obtain a current pulse from the integrated controlling circuit (the first-order RC response circuit formed by the capacitance of the FOC1-embedded gate [11] and the series-connected diodes). Then, the parasitic thyristor of the SIGBT is turned on.…”

A new trench gate field stop insulated gate bipolar transistor (IGBT) with a significant reduction in Miller capacitance

“…Insulated gate bipolar transistor (IGBT) is the key component utilized for all kinds of power switching applications in the middle voltage range, such as in automobiles, motor drive and uninterruptible power supplies (UPS) and so on [1][2][3]. Over the past decades, numerous studies on the improvement the performances of IGBTs, mainly including the on-state voltage drop [4][5][6][7][8][9][10][11][12][13][14][15][16] and turn-off loss [11][12][13][14][15][16][17][18] have been conducted. This includes the utilization of the trench gate [5] and field stop structures [19] resulting in dramatic improvement in the trade-off relationship between the on-state voltage drop and the turnoff loss.…”