Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda, Shigeto; Minato, T.; Shimizu, Kazuhiro; Furukawa, Akihiko; Terasaki, Yoshiaki; Hatade, Kazunari; Takata, Yoshifumi

doi:10.1049/iet-pel.2019.0053

Cited by 2 publications

(2 citation statements)

References 85 publications

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“…Figure 9 also indicates the modules that are classified as "automotive grade" † † † (rounded technologies) or that are otherwise recommended by the manufacturer for use (C) Mitsubishi Electric IGBT modules [129][130][131][132][133][134].…”

Section: Igbt-based Power Modulesmentioning

confidence: 99%

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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Section: Igbt-based Power Modulesmentioning

confidence: 99%

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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“…As the mainstream device of medium and high voltage converters, insulated gate bipolar transistors (IGBT) are widely used in locomotive traction, ship propulsion, and high voltage direct current transmission systems, and its switching transient process directly affects the stable and reliable operation of the system [1,2]. Especially, the accurate quantitative analysis of the IGBT switching transient process is particularly important in key technologies such as converter circuit design, drive circuit parameter configuration, and electromagnetic compatibility performance design [3,4].…”

Section: Introductionmentioning

confidence: 99%

Modelling and solving of IGBT's transient analysis model based on the finite state machine

Hao

Cheng

et al. 2021

IET Power Electronics

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To accurately obtain the switching characteristics of insulated gate bipolar transistors (IGBT), this paper proposes an IGBT's transient analysis model (TAM) based on the finite state machine (FSM). Firstly, the IGBT switching process in the basic converter unit is segmented in the time domain, and the circuit equations among the variables are obtained based on Kirchhoff's law. Then, the switching mechanism and parameters of the IGBT are decoupled based on time segmentation, and clarifying state equations and the transition events for each stage. Subsequently, all the stages and events are modeled in an FSM, thus establishing the IGBT's TAM, and it was realized the Stateflow toolbox of Matlab/Simulink. Finally, some experiments were performed on IGBTs with different current and voltage. The results show that the TAM can accurately describe the switching characteristics of IGBT and is suitable for different voltage and current levels.

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Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Cited by 2 publications

References 85 publications

The role of power device technology in the electric vehicle powertrain

The role of power device technology in the electric vehicle powertrain

Modelling and solving of IGBT's transient analysis model based on the finite state machine

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