Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer

Abstract

Two-dimensional van der Waals (2D vdWs) materials are a class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential for use in electronic and optoelectronic applications because of its allotropic properties, high mobility, and direct and narrow band gap. Here, we demonstrate a few-layered BP-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that our BP-based ferroelectric transistors operate satisfactorily at room temperature in ambient air and exhibit a clear memory window. Unlike conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon-fluorine (C-F) dipole effect of the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm(2) V(-1) s(-1) with a 10(3) on/off current ratio. For more advanced memory applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and memory output voltage efficiency of 95%.

Nonvolatile Memories Based on Graphene and Related 2D Materials

“…The high polarization field and dielectric constants of ferroelectric materials produce very efficient gating effects in 2D materials, modulating charge density, and all physical properties over wide range of applied voltages. Based on this, many novel device functionalities and architectures have been recently proposed including ferroelectric 2D memory devices, highly sensitive photo‐transistors, low‐power field‐effect transistors enabled by high‐κ ferroelectrics . Most of the reports in this research area have focused on ferroelectric FET structures (FeFET) where a ferroelectric layer serves as gate dielectric material .…”

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

“…Several earlier studies have reported on the combination of ferroelectrics and 2D materials, but most applications have been in memory devices and photodetectors. 18,[24][25][26][27][28] In addition, F. A. McGuire et al achieved an Fe2DFET with a sub-60 mV/dec SS, but their device was based on the MFMIS structure. 29 In addition to poly(vinylidene difluoridetrifluoroethylene) (P(VDF-TrFE)), hafnium zirconium oxide (HZO) has recently emerged as an environmentally friendly ferroelectric material.…”

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

“…The device with monolayer MoS 2 possesses a mobility as high as 220 cm 2 V −1 s −1 , a subthreshold swing of 300 mV/decade, and a~5 × 10 3 write and erase current ratio [94]. The memory inverters also show a good performance and high output voltage efficiency [95].…”