Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Abstract

Conventional field-effect transistors (FETs) are not expected to satisfy the requirements of future large integrated nanoelectronic circuits because of these circuits' ultra-high power dissipation and because the conventional FETs cannot overcome the subthreshold swing (SS) limit of 60 mV/decade. In this work, the ordinary oxide of the FET is replaced only by a ferroelectric (Fe) polymer, poly(vinylidene difluoride-trifluoroethylene) (P(VDF-TrFE)). Additionally, we employ a two-dimensional (2D) semiconductor, such as MoS 2 and MoSe 2 , as the channel. This 2D Fe-FET achieves an ultralow SS of 24.2 mV/dec over four orders of magnitude in drain current at room temperature; this sub-60 mV/dec switching is derived from the Fe negative capacitance (NC) effect during the polarization of ferroelectric domain switching. Such 2D NC-FETs, realized by integrating of 2D semiconductors and organic ferroelectrics, provide a new approach to satisfy the requirements of next-generation low-energy-consumption integrated nanoelectronic circuits as well as the requirements of future flexible electronics.

Ferroelectric Negative Capacitance Field Effect Transistor

“…Their experimental structure schematics and V G -I D curves are shown in Figure 8. [126] Figure 8b displays its outstanding electrical property, with an ultralow SS of 24.2 mV dec −1 over 4 decades of I D and I on ≈10 −5 A at V D = 0.1 V. [125] (2) Inorganic perovskitetype ferroelectric SrBi 2 Nb 2 O 9 : Because monolayer BP has a direct gap structure and relatively high electron mobility, 2D-BP-NCFET tends to achieve high on-state current and a fast switching speed. [126] Figure 8b displays its outstanding electrical property, with an ultralow SS of 24.2 mV dec −1 over 4 decades of I D and I on ≈10 −5 A at V D = 0.1 V. [125] (2) Inorganic perovskitetype ferroelectric SrBi 2 Nb 2 O 9 : Because monolayer BP has a direct gap structure and relatively high electron mobility, 2D-BP-NCFET tends to achieve high on-state current and a fast switching speed.…”

“…[65] By combining quantum tunneling mechanism and NC effect, a steeper SS can be realized. [126] Copyright 2017, Springer Nature. As t Fe increases from 200 to 300 nm, I D -V G curve becomes steeper at subthreshold region.…”

Negative Capacitance Transistor with Two‐Dimensional Channel Material (Molybdenum disulfide, MoS2)

“…Although the physical properties of TMD materials is superiorly good in terms of conductivity, mechanical flexibility, and atomically thin thickness, it is still limited by the Boltzmann tyranny. Therefore, it is necessary for 2D baseline FET (2D‐FET) to take advantages of using the NC effect, in order to have its SS below 60 mV/decade at 300 K …”

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

“…Because the negative capacitance (NC) effect can break the physical limitation of Boltzmann tyranny to implement a low subthreshold swing ( SS ) smaller than the 2.3 kT q −1 , the development of ferroelectric NC field‐effect transistor (FET) featuring a steep sub‐60 mV dec −1 NC switching under an ultralow supply voltage is critical for the application of Internet of Thing (IoT) . However, the traditional ferroelectric materials such as lead zirconate titanate (PZT) and strontium bismuth tantalite (SBT) cannot be integrated with scaled CMOS technology due to the limitation of thickness scaling.…”