2017
DOI: 10.3390/cryst7090265
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Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

Abstract: Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple … Show more

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Cited by 18 publications
(18 citation statements)
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“…For this purpose, a quantitative description of the quantum size effect derived by Brus was used as follows in eq 1. 26,27…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…For this purpose, a quantitative description of the quantum size effect derived by Brus was used as follows in eq 1. 26,27…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The current generation of spintronics devices employ hybrid geometries consisting of several twodimensional (2D) materials 4,5 in order to overcome intrinsic limitations of the transport medium. A new branch of physics has emerged, which is solely dedicated to the interface engineering 6,7 of those ultrathin layers, including semiconductors, ferromagnets and superconductors, leading to new device technologies.…”
Section: Introductionmentioning
confidence: 99%
“…However, despite the continual progress in this field, it is still challenging to incorporate 2D semiconductors into commercial products since material synthesis and device fabrication processes with 2D materials are currently not very cost-efficient and limited in scalability. Also, their operational device parameters such as carrier mobility and power consumption are expected to be inferior, out of laboratory, to those of contemporary devices which have been optimized for several decades [12]. Therefore, as promising alternative routes, diverse approaches have been made to assemble 2D semiconductors and a variety of 3D thin films structures which are very suitable for contemporary device fabrication infrastructure including classical dielectrics, semiconducting layered crystals, strongly correlated oxides, ferromagnetic materials, and ferroelectric (FE) thin epitaxies [8,12,13,14,15,16,17,18].…”
Section: Introductionmentioning
confidence: 99%
“…Also, their operational device parameters such as carrier mobility and power consumption are expected to be inferior, out of laboratory, to those of contemporary devices which have been optimized for several decades [12]. Therefore, as promising alternative routes, diverse approaches have been made to assemble 2D semiconductors and a variety of 3D thin films structures which are very suitable for contemporary device fabrication infrastructure including classical dielectrics, semiconducting layered crystals, strongly correlated oxides, ferromagnetic materials, and ferroelectric (FE) thin epitaxies [8,12,13,14,15,16,17,18]. In these 2D/3D assemblies, in addition to size scaling benefits naturally given by introducing 2D materials, interfacial interference effects or thin films’ functional attributes or both can be instilled into the 2D counterpart leading to achieving unique synergetic functionalities [12].…”
Section: Introductionmentioning
confidence: 99%