Nonvolatile Analog Memory Transistor Based on Carbon Nanotubes and C60 Molecules

Abstract

A nonvolatile analog memory transistor is demonstrated by integrating C60 molecules as charge storage molecules in the transistor gate, and carbon nanotubes (CNTs) in the transistor channel. The currents through the CNT channel can be tuned quantitatively and reversibly to analog values by controlling the number of electrons trapped in the C60 molecules. After tuning, the electrons trapped in the C60 molecules in the gate, and the current through the CNT channel, can be preserved in a nonvolatile manner, indicating the characteristics of the nonvolatile analog memory.

A Tunneling Dielectric Layer Free Floating Gate Nonvolatile Memory Employing Type‐I Core–Shell Quantum Dots as Discrete Charge‐Trapping/Tunneling Centers

“…Conventionally they are continuous films, which can realize the restriction of trapped charges in vertical direction, but are incapable of avoiding the lateral charge loss . To address this issue, nanofloating gate transistors have been developed, which employ nanomaterials such as organic nanoparticles, C 60 , 2D materials, or nanostructures of semiconductor and metal, as the floating gate. A charge‐tunneling dielectric layer is deposited upon the floating gate layer, to form discrete charge‐trapping centers dispersed in a dielectric matrix.…”

Doping Modulated Carbon Nanotube Synapstors for a Spike Neuromorphic Module

“…Large‐scale devices and circuits have been fabricated using CNT networks and conventional lithographic techniques . Previously we have fabricated transistors based on CNT networks to emulate synaptic functions . However, it is known that CNTs have energy band gaps that vary from zero to ∼1 eV, the semiconducting CNTs became p‐type after absorbing oxygen, and no significant Schottky barrier is established between the p‐type CNT channel and its metal contacts .…”

“…However, it is known that CNTs have energy band gaps that vary from zero to ∼1 eV, the semiconducting CNTs became p‐type after absorbing oxygen, and no significant Schottky barrier is established between the p‐type CNT channel and its metal contacts . The synaptic transistors made from such p‐type CNTs have large baseline currents through the CNT channel at their idle state (with no gate bias), large power consumption, and poor plasticity and long‐term memory . In this work, we report a CNT‐based electronic device, called a “synapstor,” to emulate a biological synapse with spike signal processing, plasticity, and memory functions.…”

Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

“…3,5,7 To avoid the employment of expensive noble metals, an alternative nano-floating-gate with low material cost and simple preparation process is highly desired. Recently, C-based nanostructures, such as graphene, 9 graphene oxide (GO), 10-12 reduced GO (rGO), 13 fullerene and its derivatives, 14,15 and related hybrids, 8,16 were successfully demonstrated as the nano-floating-gate. However, sputtered amorphous C, which is inexpensive, stable, and can be easily prepared by a desktop sputter instrument, has not been utilized in organic nano-floating-gate memories yet.…”