Doping Modulated Carbon Nanotube Synapstors for a Spike Neuromorphic Module

Shen, Alex Ming; Kim, Kyung-Hyun; Tudor, Andrew; Lee, Dongwon; Chen, Yong

doi:10.1002/smll.201402528

Cited by 14 publications

(13 citation statements)

References 28 publications

(54 reference statements)

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“…Three‐terminal transistors such as floating‐gate memory transistors, ionic/electronic hybrid transistors and organic transistors (CNT‐based transistors) are capable of achieving simultaneous signal transmission and learning operations. These two perpendicular channel‐based devices can exhibit linear conductance tuning more easily by modulating the gate bias and hence the charge carriers within the semiconducting channel based on charge transport and trapping mechanism.…”

Section: Functional Applications Of Ambipolar Transistorsmentioning

confidence: 99%

Recent Advances in Ambipolar Transistors for Functional Applications

Ren

Yang

Zhou

et al. 2019

Adv Funct Materials

168

139

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Ambipolar transistors represent a class of transistors where positive (holes) and negative (electrons) charge carriers both can transport concurrently within the semiconducting channel. The basic switching states of ambipolar transistors are comprised of common off-state and separated on-state mainly impelled by holes or electrons. During the past years, diverse materials are synthesized and utilized for implementing ambipolar charge transport and their further emerging applications comprising ambipolar memory, synaptic, logic, and light-emitting transistors on account of their special bidirectional carrier-transporting characteristic. Within this review, recent developments of ambipolar transistor field involving fundamental principles, interface modifications, selected semiconducting material systems, device structures, ambipolar characteristics, and promising applications are highlighted. The existed challenges and prospective for researching ambipolar transistors in electronics and optoelectronics are also discussed. It is expected that the review and outlook are well timed and instrumental for the rapid progress of academic sector of ambipolar transistors in lighting, display, memory, as well as neuromorphic computing for artificial intelligence.

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Section: Functional Applications Of Ambipolar Transistorsmentioning

confidence: 99%

Recent Advances in Ambipolar Transistors for Functional Applications

Ren

Yang

Zhou

et al. 2019

Adv Funct Materials

168

139

View full text Add to dashboard Cite

show abstract

“…However, the fabrication of stable and high-performance n-FETs based on CNT network films is famously challenging, and this has hindered the development of CMOS ICs based on CNT films. Recently, many methods have been developed for the fabrication of n-FETs, mainly relying on the doping of channels using chemical dopants or coverage with an insulator such as Al 2 O 3 or Si 3 N 4 , ,− similar to the reported work based on a single CNT . However, all such n-FETs have suffered from poor performance and stability, high process complexity, or incompatibility with a top-gate structure.…”

mentioning

confidence: 99%

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films

et al. 2017

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Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

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“…Thus, the baseline current through the CNT channel in an idle state was significantly reduced, thus improving power efficiency. Excitatory and inhibitory synapses were emulated using multiple CNT synapses integrated with a Si-based soma circuit [33]. Additionally, a light-stimulated neuromorphic device made of printed photogate SWNT TFT-based synapses was reported.…”

Section: Neuromorphic Devices and Hardware On A Random Network Of Cntsmentioning

confidence: 99%

In-materio computing in random networks of carbon nanotubes complexed with chemically dynamic molecules: a review

Tanaka

Azhari

Usami

et al. 2022

Neuromorph. Comput. Eng.

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The need for highly energy-efficient information processing has sparked a new age of material-based computational devices. Among these, random networks of carbon nanotubes (CNTs) complexed with other materials have been extensively investigated owing to their extraordinary characteristics. However, the heterogeneity of carbon nanotube (CNT) research has made it quite challenging to comprehend the necessary features of in-materio computing in a random network of CNTs. Herein, we systematically tackle the topic by reviewing the progress of CNT applications, from the discovery of individual CNT conduction to their recent uses in neuromorphic and unconventional (reservoir) computing. This review catalogues the extraordinary abilities of random CNT networks and their complexes used to conduct nonlinear in-materio computing tasks as well as classification tasks that may replace current energy-inefficient systems.

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Doping Modulated Carbon Nanotube Synapstors for a Spike Neuromorphic Module

Cited by 14 publications

References 28 publications

Recent Advances in Ambipolar Transistors for Functional Applications

Recent Advances in Ambipolar Transistors for Functional Applications

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films

In-materio computing in random networks of carbon nanotubes complexed with chemically dynamic molecules: a review

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