Non-Universal Temperature Dependence of Hot Carrier Degradation (HCD) in FinFET: New Observations and Physical Understandings

Yu, Zhuoqing; Wang, Runsheng; Peng, Hao; Guo, Shaofeng; Ren, Pengpeng; Huang, Ru

doi:10.1109/edtm.2018.8421469

Cited by 15 publications

(12 citation statements)

References 4 publications

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“…This has led to a general trend for very large-scale integration (VLSI) chips to increase in thermal design power at every generation, with notable deviations from this trend usually coming in the form of vast architectural improvements or splitting the die into multiple logical cores. The increase in dissipated heat is problematic for VLSI semiconductor chips because their functionality can unacceptably alter at high temperatures, due for instance to hot carrier degradation and bias temperature instability [4][5][6]. Now that devices are manufactured in the sub-10-nanometer process, it is becoming more difficult to manage waste heat production due to ever more important factors such as leakage current and Joule heating in interconnect circuit elements of decreasing cross-sectional area.…”

Section: Introductionmentioning

confidence: 99%

Thermal interface materials with graphene fillers: review of the state of the art and outlook for future applications

et al. 2021

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We review the current state-of-the-art graphene-enhanced thermal interface materials for the management of heat in the next generation of electronics. Increased integration densities, speed and power of electronic and optoelectronic devices require thermal interface materials with substantially higher thermal conductivity, improved reliability, and lower cost. Graphene has emerged as a promising filler material that can meet the demands of future high-speed and high-powered electronics. This review describes the use of graphene as a filler in curing and non-curing polymer matrices. Special attention is given to strategies for achieving the thermal percolation threshold with its corresponding characteristic increase in the overall thermal conductivity. Many applications require high thermal conductivity of composites, while simultaneously preserving electrical insulation. A hybrid filler approach, using graphene and boron nitride, is presented as a possible technology providing for the independent control of electrical and thermal conduction. The reliability and lifespan performance of thermal interface materials is an important consideration towards the determination of appropriate practical applications. The present review addresses these issues in detail, demonstrating the promise of graphene-enhanced thermal interface materials compared to alternative technologies.

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Section: Introductionmentioning

confidence: 99%

Thermal interface materials with graphene fillers: review of the state of the art and outlook for future applications

et al. 2021

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“…Therefore, some scientists started to model the traps rather than the increasingly complex carrier transport process [29]. A trap-based compact model is proposed, which is unified across different V gs /V ds regions with different carrier-based mechanisms [29][30][31]72,73]. For devices with different geometrical structure and crystal lattice, the trap types as well as their influence on device parameters may be different, thus it is needed to model them separately for different devices.…”

Section: Trap-based Hci Modelmentioning

confidence: 99%

Hot Carrier Injection Reliability in Nanoscale Field Effect Transistors: Modeling and Simulation Methods

Wang

Yang³

et al. 2022

Electronics

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Hot carrier injection (HCI) can generate interface traps or oxide traps mainly by dissociating the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and saturation current. It is one of the most significant reliability issues for devices and circuits. Particularly, the increase in heat generation per unit volume due to high integration density of advanced integrated circuits leads to a severe self-heating effect (SHE) of nanoscale field effect transistors (FETs), and low thermal conductivity of materials in nanoscale FETs further aggravates the SHE. High temperature improves the HCI reliability in the conventional MOSFET with long channels in which the energy of carriers can be relaxed. However, high temperature due to severe SHE deteriorates HCI reliability in nanoscale FETs, which is a big concern in device and circuit design. In this paper, the modeling and simulation methods of HCI in FETs are reviewed. Particularly, some recently proposed HCI models with consideration of the SHE are reviewed and discussed in detail.

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“…Carrier-carrier interactions are considered to populate the high energetic tail of the carrier spectrum [14,[16][17][18][19] -i.e., accelerate HCD -and the rate of this process is an increasing function of T . However, recent findings have demonstrated that the temperature dependence of HCD is nonuniversal and is determined by the device geometry and stress conditions [20][21][22]. In particular Grill et al [22] have shown that the same device can show both acceleration and inhibition of HCD with growing T , depending on applied drain and gate voltages (V ds and V gs , respectively).…”

Section: Introductionmentioning

confidence: 99%

The impact of self-heating and its implications on hot-carrier degradation – A modeling study

Tyaginov

Makarov

Chasin

et al. 2021

Microelectronics Reliability

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Non-Universal Temperature Dependence of Hot Carrier Degradation (HCD) in FinFET: New Observations and Physical Understandings

Cited by 15 publications

References 4 publications

Thermal interface materials with graphene fillers: review of the state of the art and outlook for future applications

Thermal interface materials with graphene fillers: review of the state of the art and outlook for future applications

Hot Carrier Injection Reliability in Nanoscale Field Effect Transistors: Modeling and Simulation Methods

The impact of self-heating and its implications on hot-carrier degradation – A modeling study

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