Non-destructive determination of the boron concentration of heavily doped metallic diamond thin films from Raman spectroscopy

Bernard, M.; Deneuville, A.; Muret, Pierre

doi:10.1016/j.diamond.2003.10.051

Cited by 156 publications

(75 citation statements)

References 12 publications

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“…The presence of the 500 cm -1 peak is assigned to the increase in the number of boron pairs. These boron pairs have local vibration modes giving wide bands around of 500 cm -1 [6]. In addition, the band centered at 1220 cm -1 is attributed to the Fano interference between the discrete phonon state and the electronic continuum.…”

Section: Discussionmentioning

confidence: 99%

The influence of boron doping in the growth of ultra/nanocrystalline diamond films

et al. 2012

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Boron-doped nanocrystalline diamond (BDND) films were grown on silicon substrates by hot filament chemical vapor deposition in Ar/H 2 /CH 4 gas mixtures. The boron source was obtained from an additional H 2 line passing through a bubbler containing B 2 O 3 dissolved in methanol with different B/C ratios. The transition from ultrananocrystalline to nanocrystalline diamond films is clearly shown by the addition of boron dopant to the growth gas mixture. The morphology and structure of these films have markedly different properties. The top view and the cross section of the films were characterized by scanning electron microscopy showing the transition from ultrananocrystalline growth (renucleation process) to a columnar structure of NCD films. Finally, the grain size was obtained from X-ray diffraction patterns of the films. The diamond average grain size increased from 10 to 35 nm for films with 2000 and 30,000 ppm B/C, respectively.

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Section: Discussionmentioning

confidence: 99%

The influence of boron doping in the growth of ultra/nanocrystalline diamond films

et al. 2012

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“…The band at around 500 cm -1 is assigned to the vibration modes of the boron pairs [11]. The boron concentration in the diamond films was estimated from the fitting of 500 cm -1 peak using a combination of Gaussian and Lorenzian lines [12]. The acceptor concentrations were evaluated around 10 19 and 10 21 boron atoms cm -3 for the electrode E1 and the electrode E2 electrodes, respectively.…”

Section: Methodsmentioning

confidence: 99%

Copper photoelectrodeposition onto boron doped diamond electrodes at different doping level to enhance nitrate electroreduction.

2012

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Photoelectrodeposition of copper on boron-doped diamond films (BDD) was investigated. In this work, two different doped films were analyzed. Copper particles were deposited in the potentiostat mode and under UV irradiation. The BDD film as-grown and the BDD film modifed with Cu (Cu/BDD) on the surface were characterized by Raman Spectroscopy and Scanning Electron Microscopy (SEM) respectivily. These electrodes were tested as electrocatalysts for nitrate reduction in Britton-Robinson buffer solution (pH=3). Electrochemical measurements showed that the electrode with high doping level displayed the best electrocatalytic activity.

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“…Lett. 103, 042104 (2013) in SIMS measurements, [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] leading to systematic overestimates of the real width, similar to the case of silicon. 26 If this is the case, it is legitimate to ask how the layer thickness should be estimated from broadened SIMS profiles.…”

Section: -3mentioning

confidence: 99%

“…(ii) The probed region extension averaged the deduced boron related profile. Doping level evaluation over micrometer-scale areas in diamond material can also be carried out by optical methods such as Raman 10 and FTIR. 11 Among these techniques, cathodoluminescence (CL) 12,13 is clearly the most sensitive 14 while ensuring a high spatial resolution since cross sectional analysis can be also carried out on FIB preparations.…”

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confidence: 99%

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

Araújo

Alegre

Piñero

et al. 2013

Applied Physics Letters

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To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 1020 cm−3 were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p−/p++/p− multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

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Non-destructive determination of the boron concentration of heavily doped metallic diamond thin films from Raman spectroscopy

Cited by 156 publications

References 12 publications

The influence of boron doping in the growth of ultra/nanocrystalline diamond films

The influence of boron doping in the growth of ultra/nanocrystalline diamond films

Copper photoelectrodeposition onto boron doped diamond electrodes at different doping level to enhance nitrate electroreduction.

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

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