Noise in silicon diodes

Jäntsch, O.; Feigt, I.

doi:10.1016/0038-1101(73)90074-9

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1976

1989

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Cited by 7 publications

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“…4together with the experimental data. I n principle, it should be possible to obtain information on the deviation of the carrier distribution function from a Fermi distribution, if the experimental data for a certain electric field cannot be described by a calculated curve for a Fermi distribution a t a certain electron temperature[4].Within our experimental accuracy no such deviations have been observed in the energy range under consideration. Thus it was possible to obtain a correlation between applied electric fields and resulting electron temperatures, which is shown in Fig.…”

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confidence: 89%

Electric field induced changes of the fundamental absorption and low‐temperature energy relaxation in n‐type GaSb

Obiditsch

Kählert

1976

Physica Status Solidi (b)

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The dependence of the absorption coefficient a on the photon energy is investigated for different degenerately doped samples of n-type GaSb in the region of the fundamental absorption. A comparison of the experimental data with the theory by Dyakonov e t al.shows satisfactory agreement for a > 500 crn-'. The application of pulsed electric fields a t a lattice temperature of 6 K gradually removes the Burstein-Moss shift.

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confidence: 89%