Nitrogen-doped titanium dioxide nanorod array memristors with synaptic features and tunable memory lifetime for neuromorphic computing

Yu, Yantao; Wang, Chunqi; Jiang, Chao; Wang, Lanzhi; Wang, Ze; Du, Zuojuan; Sun, Jia; Abrahams, Isaac; Huang, Xiaozhong

doi:10.1016/j.jallcom.2021.159194

Cited by 16 publications

(14 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, the substitution by nitrogen atoms has the effect of increasing the electron density on titanium because of the lower electronegativity of N compared to O. This can enhance the susceptibility of titanium to reduction providing an additional mechanism for vacancy formation [29]:…”

Section: Resultsmentioning

confidence: 99%

“…We have also recently demonstrated volatile synaptic behavior in Al/N-TiO2 NARs/FTO devices, with tunable lifetimes ranging from a few seconds to tens of thousands of seconds. [29] This huge variation in relaxation time is attributed to the diverse sources of vacancies, such as the introduced nitrogen defects and the oxygen scavenging aluminum top electrode. The defective levels engineering by nitrogen doping are assumed to have effects on stability of device properties, such as, conductive filaments and retention.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control

Wang

Wen

et al. 2022

Journal of Alloys and Compounds

Self Cite

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control

Wang

Wen

et al. 2022

Journal of Alloys and Compounds

Self Cite

View full text Add to dashboard Cite

“…Moreover, another important factor affecting the performances of the memristors is the preparation process. The transition metal oxide TiO 2 has been prepared by the hydrothermal method [ 16 , 17 , 18 , 19 , 20 ], the magnetron sputtering method [ 21 , 22 ], the electrochemical anodization method [ 23 , 24 ], the atomic layer deposition method (ALD) [ 25 , 26 ], and other methods [ 27 , 28 , 29 ]. In particular, the hydrothermal method with its simple experimental steps and high economic benefits is an effective approach to prepare the transition metal oxide TiO 2 .…”

Section: Introductionmentioning

confidence: 99%

The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device

Han

et al. 2023

Sensors

View full text Add to dashboard Cite

In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device is analyzed. The W/TiO2/FTO memory device exhibits a nonvolatile bipolar resistive switching behavior with a high resistance ratio (RHRS/RLRS) of about two orders of magnitude. The conduction behaviors of the W/TiO2/FTO memory device are attributed to the Ohmic conduction mechanism and the Schottky emission in the low resistance state and the high resistance state, respectively. Furthermore, the RHRS/RLRS of the W/TiO2/FTO memory device is obviously increased from about two orders of magnitude to three orders of magnitude after the rapid nitrogen annealing treatment. In addition, the change in the W/TiO2 Schottky barrier depletion layer thickness and barrier height modified by the oxygen vacancies at the W/TiO2 interface is suggested to be responsible for the resistive switching characteristics of the W/TiO2/FTO memory device. This work demonstrates the potential applications of the rutile TiO2 nanowire-based W/TiO2/FTO memory device for high-density data storage in nonvolatile memory devices.

show abstract

“…The resulting device exhibited an electroforming free bipolar resistive switching behavior with negligible sneak current of less than 100 pA. Crossbar arrays of Na-doped TiO 2 memristors also achieved an accuracy of >99.1% for image recognition. Yu et al [33] doped the nanorods of TiO 2 with N to achieve a tunable nonvolatile memory for neuromorphic computing with the ability of mimicking the human brain in future. It was shown that N doping resulted in improved resistive switching characteristics such as endurance of over 8000 electric cycles due to the creation of additional anion vacancies in the functional layer of TiO 2 .…”

Section: Introductionmentioning

confidence: 99%

All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO2 Nanoparticle Thin Films

et al. 2022

View full text Add to dashboard Cite

A memristor is a fundamental electronic device that operates like a biological synapse and is considered as the solution of classical von Neumann computers. Here, a fully printed and flexible memristor is fabricated by depositing a thin film of metal–non-metal (chromium-nitrogen)-doped titanium dioxide (TiO2). The resulting device exhibited enhanced performance with self-rectifying and forming free bipolar switching behavior. Doping was performed to bring stability in the performance of the memristor by controlling the defects and impurity levels. The forming free memristor exhibited characteristic behavior of bipolar resistive switching with a high on/off ratio (2.5 × 103), high endurance (500 cycles), long retention time (5 × 103 s) and low operating voltage (±1 V). Doping the thin film of TiO2 with metal–non-metal had a significant effect on the switching properties and conduction mechanism as it directly affected the energy bandgap by lowering it from 3.2 eV to 2.76 eV. Doping enhanced the mobility of charge carriers and eased the process of filament formation by suppressing its randomness between electrodes under the applied electric field. Furthermore, metal–non-metal-doped TiO2 thin film exhibited less switching current and improved non-linearity by controlling the surface defects.

show abstract

Nitrogen-doped titanium dioxide nanorod array memristors with synaptic features and tunable memory lifetime for neuromorphic computing

Cited by 16 publications

References 51 publications

Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control

Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control

The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device

All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO2 Nanoparticle Thin Films

Contact Info

Product

Resources

About