Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control

Potentiation and depression behaviour in a two-terminal memristor based on nanostructured bilayer ZrO x /Au films

“…The greater the sweep velocity, the greater the current passing through the device. This effect can be attributed to charged migrating species [33,34], originating from defects into the zirconia overlayer, and modifying the conductivity of the device. Furthermore, current spiking activity, ascribable to the ns-Au film switching activity, appears at applied voltages over 10 V (figure 4).…”

Evolution between Volatile and Nonvolatile Resistive Switching Behaviors in Ag/TiOx/CeOy/F-Doped SnO2 Nanostructure-Based Memristor Devices for Information Processing Applications

“…In recent years, with continuous in-depth study of memristors, it has been found that the volatile resistance of some memristive devices can be converted into a nonvolatile by changing the device structure, current limiting, or doping concentration. − The memristor being both volatile and nonvolatile can not only realize single device gating and storage but also play a very important role in the construction of a full memristor neural network. , For example, Wang et al used the forgetting effect of volatile memristors and the plasticity of nonvolatile memristors to carry out brain-inspired emotional evolution, and the proposed circuit can be applied to robots with brain-inspired emotional development . Up to now, there are many reports on the existence of volatile and nonvolatile devices alone. − However, the memristive devices with these two characteristics are not easy to develop .…”

Chemical-vapor-deposited 2D VSe2 nanosheet with threshold switching behaviors for Boolean logic calculations and leaky integrate-and-fire functions

“…[3][4][5] In order to overcome the limitations of conventional CMOS-based devices, various materials based non-volatile resistive switching (RS) memristors (e.g., Pr 0.7 Ca 0.3 MnO 3 , 6 ferromagnetic material, 7 etc.) and volatile threshold switch (TS) memristors (e.g., BiOX, 8 N-doped TiO 2 , 9 VO 2 , 10,11 NbO 2 , 12,13 etc.) have been recently developed to simulate the LIF behavior of neurons.…”

“…and volatile threshold switch (TS) memristors ( e.g. , BiOX, 8 N-doped TiO 2 , 9 VO 2 , 10,11 NbO 2 , 12,13 etc. ) have been recently developed to simulate the LIF behavior of neurons.…”