Advancement in electronic industry has revolutionized the lifestyle of mankind at the cost of leaving adverse effects on the environment due to the use of toxic and nondegradable functional materials abundantly used in various electronic devices. The use of biomaterials in electronic devices with attractive properties is by far the best solution for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Biomaterials are environmentally friendly and biocompatible with the added advantages of easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This Review targets the characteristics, advancements, role, limitations, and prospects of using biomaterials as the functional layer of a resistive random-access memory (RRAM) device with a primary focus on the electronic properties of bio-RRAMs. Among the available memory devices, RRAMs have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. Applications of using biomaterial-based RRAMs have also been discussed including mimicking the human brain, fabricating wearable memory devices, and implanting bio-RRAMs. The motivation behind this work is to promote the use of biomaterials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic industry.
A memristor is a fundamental electronic device that operates like a biological synapse and is considered as the solution of classical von Neumann computers. Here, a fully printed and flexible memristor is fabricated by depositing a thin film of metal–non-metal (chromium-nitrogen)-doped titanium dioxide (TiO2). The resulting device exhibited enhanced performance with self-rectifying and forming free bipolar switching behavior. Doping was performed to bring stability in the performance of the memristor by controlling the defects and impurity levels. The forming free memristor exhibited characteristic behavior of bipolar resistive switching with a high on/off ratio (2.5 × 103), high endurance (500 cycles), long retention time (5 × 103 s) and low operating voltage (±1 V). Doping the thin film of TiO2 with metal–non-metal had a significant effect on the switching properties and conduction mechanism as it directly affected the energy bandgap by lowering it from 3.2 eV to 2.76 eV. Doping enhanced the mobility of charge carriers and eased the process of filament formation by suppressing its randomness between electrodes under the applied electric field. Furthermore, metal–non-metal-doped TiO2 thin film exhibited less switching current and improved non-linearity by controlling the surface defects.
The present study investigated the influence of nanoscale residual stress depth gradients on the nano-mechanical behavior and adhesion energy of aluminium nitride (AlN) and Al/AlN sputtered thin films on a (100) silicon substrate. By using a focused ion beam (FIB) incremental ring-core method, the residual stress depth gradient was assessed in the films in comparison with standard curvature residual stress measurements. The adhesion energy was then quantified by using a nanoindentation-based model. Results showed that the addition of an aluminum layer gave rise to additional tensile stress at the coating/substrate interface, which can be explained in terms of the differences of thermal expansion coefficients with the silicon substrate. Therefore, the coatings without the Al layer showed better adhesion because of a more homogeneous compressive residual stress in comparison with the coating having the Al layer, even though both groups of coatings were produced under the same bias voltage. Results are discussed, and some general suggestions are made on the correlation between coating/substrate property combinations and the adhesion energy of multilayer stacks. The results suggested that the Al bond layer and inhomogeneous residual stresses negatively affected the adhesion of AlN to a substrate such as silicon.
Biopolymers are a solution to solve the increasing problems caused by the advances and revolution in the electronic industry owing to the use of hazardous chemicals. In this work, we have used egg white (EW) as the low-cost functional layer of a biocompatible humidity sensor and deposited it on gold (Au) interdigitated electrodes (IDEs) patterned through the state-of-the-art fabrication technology of thermal vacuum evaporation. The presence of hydrophilic proteins inside the thin film of EW makes it an attractive candidate for sensing humidity. Usually, the dependence of the percentage of relative humidity (%RH) on the reliability of measurement setup is overlooked for impedimetric humidity sensors but we have used a modified experimental setup to enhance the uniformity of the obtained results. The characteristics of our device include almost linear response with a quick response time (1.2 s) and fast recovery time (1.7 s). High sensitivity of 50 kΩ/%RH was achieved in the desirable detection range of 10–85%RH. The device size was intentionally kept small for its potential integration in a marketable chip. Results for the response of our fabricated sensor for dry and wet fingertips, along with determining the rate of breathing through the mouth, are part of this study, making it a potential device for health monitoring.
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