Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate

Abstract

We demonstrate InGaN/GaN superluminescent diodes with broadened emission spectra fabricated on surface-shaped bulk GaN (0001) substrates. The patterning changes the local vicinal angle linearly along the device waveguide, which results in an indium incorporation profile in InGaN quantum wells. The structure was investigated by microphotoluminescence mapping, showing a shift of central emission wavelength from 413 nm to 430 nm. Spectral full width at half maximum of processed superluminescent diodes is equal to 6.1 nm, while the reference chips show 3.4 nm. This approach may open the path for using nitride devices in applications requiring broad emission spectrum and high beam quality, such as optical coherence tomography.

A tutorial on laser-based lighting and visible light communications: device and technology [Invited]

“…In this section, we discuss the critical advances in light emitters for enabling high data rate VLC systems as illustrated in Fig. 4 [11,12,15,[42][43][44][45][46][47][48][49][50][51].…”

“…4. Recent advances in group-III-nitride-based laser diodes and SLD for enabling high data rate VLC systems [11,12,15,[42][43][44][45][46][47][48][49][50][51] on c-plane oriented substrates, in which the polar plane suffers from strong polarization fields and reduced internal quantum efficiency [52]. Since 2007, there has been growing research interest in developing various types of InGaN LDs on non-c-plane GaN substrates.…”

High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW

“…SLD combines the advantages of both LD and LED, making it a promising light source for various applications, including lighting, optical coherent tomography (OCT), and picoprojections [7]. Moreover, shorter wavelengths of nitride SLDs have higher impact on enhancing in-plane resolution which is crucial for OCT, sensors, and fiber optic gyroscopes applications [8]. In this work, we report a high-power blue emitting SLD using a tilted-facet configuration.…”

Study of the spectral and power characteristics of In0.2Ga0.8N/GaN superluminescent light-emitting diodes by taking into account the piezoelectric polarization fields

“…Also, A. Kafar et al have reported InGaN/GaN superluminescent diodes with broadened emission spectra fabricated on surface-shaped bulk GaN (0001) substrates [12]. M. T. Hardy et al have conducted theoretical studies on the GaN based SLDs [13].…”