A broadband superluminescent light emitting diode with In0.2Ga0.8N/GaN multiple quantum wells (MQWs) active region is investigated. The investigation is based on a theoretical model which includes the calculation of electronic states of the structure, rate equations, and the spectral radiation power. Two rate equations corresponding to MQW active region and separate confinement heterostructures layer are solved self-consistently with no-k selection wavelength dependent gain and quasi-Fermi level functions. Our results show that the superluminescence started in a current of ∼120 mA (∼7.5 kA/Cm2) at 300 K. The range of peak emission wavelengths for different currents is 423–426 nm and the emission bandwidth is ∼5 nm in the superluminescence regime. A maximum light output power of 7.59 mW is obtained at 600 mA and the peak modal gain as a function of current indicates logarithmic behavior. Also, the comparison of our calculated results with published experimental data is shown to be in good agreement.
Study of the spectral and power characteristics of In 0.2 Ga 0.8 N/GaN superluminescent light emitting diodes by taking into account the piezoelectric polarization fields
In this study, the effects of the piezoelectric polarization field have been investigated on the spectral and power characteristics of In0.2Ga0.8N/GaN superluminescent light emitting diodes. The Schrödinger and Poisson equations, the rate equations in the multiple quantum well active region and separate confinement heterostructure layers, and the optical propagating equations have been solved in the presence of the piezoelectric field. The results have been compared with results of the case of without piezoelectric field. According to the results, in the presence of piezoelectric field, the red-shift occurs in the spectra, and the width of spectrum increases. Also, the piezoelectric field decreases the peak intensity of spectrum and modal gain of the device.
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