NiO/β-(Al<i>x</i>Ga1−<i>x</i>)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage &amp;gt;7 kV

Wan, Hsiao-Hsuan; Li, Jian-Sian; Chiang, Chao-Ching; Xia, Xinyi; Ren, F.; Masten, Hannah; Lundh, James Spencer; Spencer, Joseph; Alema, Fikadu; Osinsky, A.; Jacobs, Alan G.; Hobart, Karl D.; Tadjer, Marko J.; Pearton, S. J.

doi:10.1116/6.0002393

Cited by 7 publications

(7 citation statements)

References 47 publications

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“…While UWBG devices have not reached 10 kV, gallium oxide (Ga2O3) is approaching. Breakdown voltage (BV) from 3 kV up to 8.56 kV has been reported in Ga 2 O 3 -based lateral [5], [6] and vertical diodes [7]- [11] as well as lateral MOSFETs [12]- [15]. Additionally, the availability of highquality 4-inch wafers [16] and the reports of high-performance packaging, device robustness, and converter applications [17] all consolidate the promise of Ga2O3 for power electronics.…”

Section: Introductionmentioning

confidence: 93%

10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C

Qin

Xiao

Porter

et al. 2023

IEEE Electron Device Lett.

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This work demonstrates a lateral Ga2O3 Schottky barrier diode (SBD) with a breakdown voltage (BV) over 10 kV, the highest BV reported in Ga2O3 devices to date. The 10 kV SBD shows good thermal stability up to 200 o C, which is among the highest operational temperatures reported in multi-kilovolt Ga2O3 devices. The key device design for achieving such high BV is a reduced surface field (RESURF) structure based on the p-type nickel oxide (NiO), which balances the depletion charges in the n-Ga2O3 channel at high voltage. At BV, the charge-balanced Ga2O3 SBD shows an average lateral electric field (E-field) over 4.7 MV/cm at 25 o C and over 3.5 MV/cm at 200 o C, both of which exceed the critical E-field of GaN and SiC. The 10 kV SBD shows a specific on-resistance of 0.27 Ω·cm 2 and a turn-on voltage of 1 V; at 200 o C, the former doubles and the latter reduces to 0.7 V. These results suggest the good potential of Ga2O3 devices for mediumand high-voltage, high-temperature power applications. 1

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Section: Introductionmentioning

confidence: 93%

10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C

Qin

Xiao

Porter

et al. 2023

IEEE Electron Device Lett.

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“…Figure 10d shows the reverse I-V characteristics of the devices, where the negative temperature dependence of the BVs was observed, and thus the breakdown mechanism did not involve avalanche breakdown. They further studied devices with different diameters (50, 75, and 100 µm) [103]. The forward I-V curves of the devices with different diameters showed that the inclusion of the alloy did not significantly degrade the turn-on voltage.…”

Section: β-(Almentioning

confidence: 99%

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Herath Mudiyanselage,

Da,

Adivarahan

et al. 2024

Electronics

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During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

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“…Masten et al used a similar approach to fabricate β-(AlxGa1−x)2O3/β-Ga2O3 metal-semiconductor field effect transistors with promising performance (22). We have previously shown that such structures may reach high breakdown voltages, around 7 kV, but have relatively high on-resistance (45).…”

Section: Introductionmentioning

confidence: 99%

Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers

Wan,

Li,

Chiang

et al. 2024

ECS Trans.

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The characteristics of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 heterojunction lateral geometry rectifiers with the epitaxial layers grown by Metal Organic Chemical Vapor Deposition were measured over the temperature range from 25-225°C. The forward current increased with temperature, while the on-state resistance decreased from 360 Ω•cm2 at 25°C to 30 Ω.cm2 at 225°C. The forward turn-on voltage was reduced from 4 V at 25°C to 1.9 V at 225°C. The reverse breakdown voltage at room temperature was ~4.2 kV, with a temperature coefficient of -16.5 V/K. This negative temperature coefficient precludes avalanche being the breakdown mechanism and indicates that defects still dominate the reverse conduction characteristics. The corresponding power figures-of-merit were 0.27-0.49 MW.cm-2. The maximum on/off ratios improved with temperature from 2105 at 25°C to 3107 at 225°C when switching from 5 V forward to 0 V. The high temperature performance of the NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 lateral rectifiers is promising if the current rate of optimization continues.

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NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Cited by 7 publications

References 47 publications

10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C

10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers

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NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage &gt;7 kV

Cited by 7 publications

References 47 publications

10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C

10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers

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NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C

10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C