β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances
Dinusha Herath Mudiyanselage,
Bingcheng Da,
Jayashree Adivarahan
et al.
Abstract:During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and… Show more
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