New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements

Gudovskikh, A. S.; Chouffot, Rémy; Kleider, Jean‐Paul; Kaluzhniy, N. A.; Lantratov, V. M.; Mintairov, S. A.; Damon-Lacoste, J.; Eon, David; Cabarrocas, P. Roca i; Ribeyron, P.J.

doi:10.1016/j.tsf.2007.12.021

Cited by 8 publications

(6 citation statements)

References 8 publications

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“…In contrast, at the native silicon surfaces, SRV of 4990 cm/s and 2040 cm/s are calculated for p and n-type substrates, respectively. In general, the relationship between SRV and the surface defect density ͑N T ͒ is quite complicated 15 but in its simplest form…”

mentioning

confidence: 99%

Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone

Avasthi

Vertelov

et al. 2010

Applied Physics Letters

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Merged organic-silicon heterojunction devices require the passivation of dangling bonds at the silicon surface, preferably with a low-temperature process. In this paper, we demonstrate the high-quality passivation of the silicon ͑100͒ surface using an organic molecule ͑9,10-phenanthrenequinone, PQ͒. PQ reacts with the dangling bonds, thus providing a bridge between organic semiconductors and silicon. We measure low recombination velocities ͑ϳ150 cm/ s͒ at the PQ-silicon interface. Metal/organic-insulator/silicon capacitors and transistors prove that at PQ-silicon interface, the Fermi level can be modulated. The formation of an inversion layer with electron mobility of 600 cm 2 / V•s further demonstrates the passivation quality of PQ.

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confidence: 99%

Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone

Avasthi

Vertelov

et al. 2010

Applied Physics Letters

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“…To confirm the influence of the thin 30 nm defective layer on the performance of a‐Si:H/c‐Si heterojunction solar cells, computer simulations were performed using AFORS‐HET software . The double heterojunction structures (p)a‐Si:H/(n)c‐Si/(n)a‐Si:H were simulated with typical values for the c‐Si and a‐Si:H material parameters, whereas the thicknesses and doping level corresponded to the experimental samples. The values of conduction and valence band offsets were set equal to 0.15 and 0.45 eV, respectively .…”

Section: Resultsmentioning

confidence: 99%

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Kudryashov

Gudovskikh

Baranov

et al. 2019

Physica Status Solidi (a)

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Micro‐ and nanostructured silicon surface application is a promising way of photovoltaic development. An enhancement of optical absorption in solar cells can be achieved, for example, using vertically aligned silicon nanostructures with high aspect ratios. Cryogenic plasma etching is a suitable method for such structures' formation; however, there is still lack of data describing an effect of cryogenic inductively coupled plasma (ICP) etching on defect formation in silicon (Si). The defects may act as recombination centers, leading to solar cell characteristics degradation. Herein, the cryogenic dry etching effects on defect formation in float‐zone (FZ) n‐type silicon substrates and on the photovoltaic properties of solar cells made of plasma‐etched silicon substrate are presented. The decrease in low‐injection minority carrier lifetime in silicon from 0.85 to 0.55 ms is observed by photoluminescence decay after the ICP dry etching at −140 °C. This leads to an open‐circuit voltage drop for the (p)a‐Si:H/(n)c‐Si/(n)a‐Si:H heterojunction structure from 680 to 630 mV. A detailed study of the defect properties by deep‐level transient spectroscopy (DLTS), numerical simulation, and its behavior after wet etching and thermal annealing is presented.

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“…On As a consequence, the diffusion capacitance depends apparently on D it above 10 10 cm −2 eV −1 . The measurement based on the diffusion capacitance decrease is in turn very sensitive to D it down to 10 10 cm −2 eV −1 as is demonstrated [11][12][13].…”

Section: Effect Of Interface States On the Diffusion Capacitancementioning

confidence: 94%

“…As various passivation techniques have been developed to improve the interface properties [7][8][9][10], such measurements are not sufficient for the characterization of properties of high-efficiency solar cells, where lower values of D it are expected. To improve the sensitivity of measurement to interface states, Gudovskikh et al [11][12][13] have recently proposed a new interface characterization measurement, capacitance spectroscopy under illumination and at a forward bias close to the open-circuit voltage V oc . Capacitance spectroscopy has a plateau at low frequencies of magnitude 10 −5 F cm −2 , much higher than other capacitances at zero or small reverse bias in the dark (10 −8 F cm −2 ).…”

Section: Introductionmentioning

confidence: 99%

Characterization of interface states in a-Si : H/c-Si heterojunctions by an expression of the theoretical diffusion capacitance

Zhong¹,

Yao²,

Geng³

2010

J. Phys. D: Appl. Phys.

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Capacitance spectroscopy under illumination and at a forward bias close to the open-circuit voltage (V oc) has recently been proposed to characterize interface states in a-Si : H/c-Si heterojunctions, and the interface defect density, D it, is estimated from the simulations of capacitance. In this paper, the theoretical diffusion capacitance, C D, is presented for measurement to directly characterize the interface states. By solving the excess minority carrier density in c-Si when interface states are introduced, the expression of C D is developed as a function of D it, the excess minority carrier density out of c-Si depletion and diffusion regions, Δn, and the carrier diffusion lengths in c-Si. C D decreases with increasing D it since the interface states act as recombination centres to decrease the excess carrier density in c-Si. The measurement is sensitive to D it down to 1010 cm−2 eV−1. Accordingly, in the measurement of Δn and the carrier diffusion lengths in c-Si, the interface states can be characterized directly and accurately by the theoretical diffusion capacitance.

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New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements

Cited by 8 publications

References 8 publications

Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone

Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Characterization of interface states in a-Si : H/c-Si heterojunctions by an expression of the theoretical diffusion capacitance

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