Abstract:We demonstrate the fabrication of strained Si-OnInsulator (sSOI) using a relaxation process of a compressive SiGe layer on SOI, and the transfer of lattice parameter from the relaxed SiGe to the Si layer. This process is based on a partial amorphization and recrystallization of the SiGe/Si stack. We used HRXRD (High Resolution X-Ray Diffraction) and TEM (Transmission Electron Microscopy) to characterize the microstructure of the layers. Strain and Stress evolutions throughout the process were determined using … Show more
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