New Failure Mechanisms in Sputtered Aluminum-Silicon Films

Curry, John M.; Fitzgibbon, G.; Guan, Yunxia; Muollo, R.; Nelson, George F.; Thomas, A.

doi:10.1109/irps.1984.362013

Cited by 43 publications

(15 citation statements)

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“…We can now understand the observations of Klema et al 1 and Curry et al 2 Their metal was deposited in the presence of significant amounts of nitrogen. Presumably nitrogen adsorbed on grain boundaries sufficiently reduces the energy required to form free surface so that heterogeneous nucleation is permitted.…”

Section: Conditions For Void Formationmentioning

confidence: 67%

Stress-Induced Void Formation in Metal Lines

Flinn¹,

Mack²,

Besser³

et al. 1993

MRS Bull.

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The problem of stress-induced voiding in the metal lines used for VLSI interconnections appeared about 10 years ago and was first reported in the literature in 1984. Some typical voids are shown in Figure 1. It is not entirely coincidental that the problem is of about the same age as the personal computer. The continuing advances in process technology that make possible the ever lower costs and improved performance of VLSI devices often have unexpected and troublesome side effects. Continuous attention to potential effects of process changes on the behavior of the materials comprising a VLSI chip is essential to avoid passing on problems to customers. The history of stress-induced voiding provides a good illustration.

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Section: Conditions For Void Formationmentioning

confidence: 67%

Stress-Induced Void Formation in Metal Lines

Flinn¹,

Mack²,

Besser³

et al. 1993

MRS Bull.

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“…As a result, reliability problems increasingly become associated with the metal lines rather than the active devices. The inherent lack of reliability may result from corrosion (Koelmans 1974, Comizzoli 1976, Wada et al 1986), electromigration (Black 1969, Ghate 1983, Fischer and Neppl 1984 or the stress-migration phenomenon (Curry et al 1984, Klema et al 1984, Hinode et al 1990, Korhonen et al 1991, Kusaka et al 1996. The last of these, stress-migration, is fast becoming the dominant failure mechanism, especially as metal line widths reach submicron dimensions.…”

Section: Introductionmentioning

confidence: 99%

An investigation of the impact of a Ti barrier metal on the thermal stress field in passivated aluminium lines and vias in VLSI systems using finite element modelling approach

Igić¹,

Mawby²

2000

International Journal of Electronics

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To cite this article: P. M. Igic & P. A. Mawby (2000) An investigation of the impact of a Ti barrier metal on the thermal stress field in passivated aluminium lines and vias in VLSI systems using finite element modelling approach, InternationalThe impact of a thin titanium barrier layer on the residual thermal stress in passivated aluminium lines and vias during the manufacture of multilevel structures is investigated using an advanced ® nite element approach. It is con® rmed that the titanium signi® cantly improves the reliability of the aluminium metallization, since, though the residual stress may be higher, the resulting plastic deformation is still lower.

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“…Circuit failures were observed due to stress induced voiding that sever connection in these lines. 1,2 Electromigration is the movement of conductor atoms under the influence of an electrical current. The electron wind force arising due to the momentum transfer from the drifting electrons is responsible for the migration.…”

Section: Introductionmentioning

confidence: 99%

Measurement of strain in Al–Cu interconnect lines with x-ray microdiffraction

Solak

Vladimirsky

Cerrina

et al. 1999

Journal of Applied Physics

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We report measurement of strain in patterned Al-Cu interconnect lines with x-ray microdiffraction technique with a ϳ1 m spatial resolution. Monochromatized x rays from an undulator were focused on the sample using a phase fresnel zone plate and diffracted light was collected by an area detector in a symmetric, angle dispersive x-ray diffraction geometry. Measurements were made before and after the line sample was stressed for electromigration. Results show an increase in interand intra-grain strain variation after the testing. Differences in strain behavior of grains with ͑111͒ and ͑200͒ crystallographic planes parallel to the substrate surface were observed. A position dependent variation of strain after the testing was measured whereas no such dependence was found before the testing.

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New Failure Mechanisms in Sputtered Aluminum-Silicon Films

Cited by 43 publications

References 0 publications

Stress-Induced Void Formation in Metal Lines

Stress-Induced Void Formation in Metal Lines

An investigation of the impact of a Ti barrier metal on the thermal stress field in passivated aluminium lines and vias in VLSI systems using finite element modelling approach

Measurement of strain in Al–Cu interconnect lines with x-ray microdiffraction

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