Narrowband photomultiplication-type organic photodetectors (PMOPDs) are realized with poly(3-hexylthiophene-2,5-diyl) (P3HT) as the optical field adjusting (OFA) layer and transfer-printed P3HT: [6,6]-phenyl-C 71 -butyric acid methyl ester (PC 71 BM) (50:1, w/w) as the photomultiplication (PM) layer. The thickness of the OFA layers is adjusted to optimize interfacial trapped electron distribution and density, which determines the external quantum efficiency (EQE) and spectral response range of PMOPDs. Narrowband PMOPDs with 2.5 µm thick P3HT as the OFA layer exhibit two narrow response peaks at 350 and 660 nm, and the corresponding EQE values at 350 and 660 nm are 180% and 760% under an applied bias of −20 V. A wide bandgap polymer poly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine] (P-TPD) is deliberately incorporated into OFA layer for adjusting interfacial trapped electron distribution near Al electrode. Narrowband PMOPDs exhibit only one response peak at 660 nm with the enhanced EQE value of 1120% under the same bias. The enhanced EQE of PMOPDs with P-TPD is primarily attributed to the increased hole tunneling injection and transport, which can be ascribed to the enhanced trapped electron density near the Al electrode and the improved hole mobility, respectively. Clearly resolved images can be obtained from the imaging system with the narrowband PMOPDs as sensing pixel without any current preamplifier, indicating the promising potential of PMOPDs in imaging sense.
Nanosecond pulsed laser heating was used to control the assembly of spatially correlated nanoparticles from lithographically patterned pseudo-one-dimensional nickel lines. The evolution of the nickel line instabilities and nanoparticle formation with a correlated size and spacing was observed after a series of laser pulses. To understand the instabilities that direct the nanoparticle assembly, we have carried out nonlinear time-dependent simulations and linear stability analysis based on a simple hydrodynamic model. We find that the simulated time scales and length scales agree well with the experimental results. Interestingly, in both experiments and simulations, the instabilities associated with the line edge, and with the surface perturbation-driven mechanism, are found to result in similar particle sizes and spacings.
Scanning electron micrographs of pulsed laser treated thin nickel patterns. The top images are the initial thin film circle, square and triangle. (Each pulse with the laser melts some of the nickel, which quickly re-solidifies, in a slightly different pattern.
One- and two-dimensional (1D and 2D) nanorippled structures produced in silicon by ultraviolet laser irradiation were investigated using atomic force and scanning electron microscopy. One- and two-beam illumination of the substrate was used to generate the nanostructures. Single-beam irradiation was done using p-polarized laser light, while the two-beam incidence was achieved employing a Lloyd’s mirror arrangement to reflect part of the beam onto the substrate. The structures were characterized by direct measurement of the ripple spacing or by measurements done on the fast Fourier transform of their atomic force microscopy (AFM) images. Under single-beam illumination, only 1D gratings were generated on the substrate surface. The grating lines were perpendicular to the projection of the electric field of the incident light on the substrate surface. For the two-beam illumination, it was very difficult to obtain the Lloyd’s mirror characteristic interference pattern due to the poor coherency of the laser employed. Nonetheless, the use of a Lloyd’s mirror not only enhanced the production of rippled structures strongly but also produced 2D gratings. The gratings generated with this arrangement are many millimeters long and cover the entire laser illuminated area. In contrast with one-beam illumination, linearly polarized light was not required to promote the rippled structures. Experimental evidence strongly suggests the following: (1) the p component of the laser light is responsible for ripple formation; (2) ripples can propagate with increasing number of pulses; and (3) the ripple structure is produced while the silicon is melted. The occurrence of melting is further supported by a computer simulation of the thermal field during the laser pulse. An estimate done using the lubrication approximation indicates that liquid is displaced from the hotter into the cooler regions by the gradient of surface tension. At angles of incidence equal or larger that 50°, the ripple spacing data indicate that incident laser light promotes the generation of plasma oscillation in the liquid silicon. These surface electromagnetic waves are responsible for the formation of ripples with lines that run parallel to the projection of the wave vector of the incident wave on the substrate surface. The simple irradiation procedure used to produce these nanostructures opens the possibility of using them as a template for ordering other nanostructures on a vast scale.
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