Measurement of strain in Al–Cu interconnect lines with x-ray microdiffraction

Solak, Harun H.; Vladimirsky, Yuli; Cerrina, F.; Lai, Barry; Yun, Wenbing; Cai, Zhonghou; Ilinski, P.; Legnini, D.; Rodrigues, W.

doi:10.1063/1.370819

Cited by 23 publications

(10 citation statements)

References 18 publications

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“…Available studies 28,29 have used simplified material or mechanical models, as will be discussed in this article. Despite the progress made in recent years on experimental techniques, such as microscale diffraction, [30][31][32][33][34] successes in interconnect stress measurements are largely confined to specially designed test structures. For efficient design, assessment, and failure analysis of realistic devices, numerical methods are necessary.…”

Section: Introductionmentioning

confidence: 99%

Thermomechanical response and stress analysis of copper interconnects

Ege

Shen

2003

Journal of Elec Materi

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This study is devoted to thermomechanical response and modeling of copper thin films and interconnects. The constitutive behavior of encapsulated copper film is first studied by fitting the experimentally measured stress-temperature curves during thermal cycling. Significant strain hardening is found to exist. Within the continuum plasticity framework, the measured stress-temperature response can only be described with a kinematic hardening model. The constitutive model is subsequently used for numerical thermomechanical modeling of Cu interconnect structures using the finite element method. The numerical analysis uses the generalized plane strain model for simulating long metal lines embedded within the dielectric above a silicon substrate. Various combinations of oxide and polymer-based low-k dielectric schemes, with and without thin barrier layers surrounding the Cu line, are considered. Attention is devoted to the thermal stress and strain fields and their dependency on material properties, geometry, and modeling details. Salient features are compared with those in traditional aluminum interconnects. Practical implications in the reliability issues for modern copper/low-k dielectric interconnect systems are discussed.

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Section: Introductionmentioning

confidence: 99%

Thermomechanical response and stress analysis of copper interconnects

Ege

Shen

2003

Journal of Elec Materi

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“…The development of x-ray microdiffraction has opened new possibilities in this area. [16][17][18] In these experiments, the photon density at the sample is increased to a level sufficient to acquire diffraction data from extremely small volume, such as 0.3 m 3 . In this letter, we report the application of this state of art x-ray microbeam diffraction technique to the study of electromigration and stress phenomena causing reliability problems in Cu interconnects.…”

Section: ͓S0003-6951͑00͒03903-6͔mentioning

confidence: 99%

X-ray microdiffraction study of Cu interconnects

Zhang

Solak

Cerrina

et al. 2000

Applied Physics Letters

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We have used x-ray microdiffraction to study the local structure and strain variation of copper interconnects. Different types of local microstructures have been found in different samples. Our data show that the Ti adhesion layer has a very dramatic effect on Cu microstructure. Strain measurement was conducted before and after electromigration test, Cu fluorescence was used to find the mass variations around voids and hillocks, and x-ray microdiffraction was used to measure the strain change around that interested region.

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“…Achromatic X-ray focusing optics and fast large-area two-dimensional-detector technology is used to micro-X-ray diffraction [7]. Micro-X-ray diffraction is performed with a focused X-ray beam of 0.3 Â 0.3 lm 2 [8], and is used to measure strains in various materials [9]. However, this method is only available at a few locations worldwide.…”

Section: Introductionmentioning

confidence: 99%