2015 IEEE Radiation Effects Data Workshop (REDW) 2015
DOI: 10.1109/redw.2015.7336722
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Neutron SEE Testing of the 65nm SmartFusion2 Flash-Based FPGA

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Cited by 13 publications
(7 citation statements)
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“…These setups offer a compact and effective testing platform for HARV-SoC. In particular, regarding the configuration memory, the flash-based FPGA provides high immunity to SEEs [27], improving the platform's availability for the experiment. Also, the usage of a custom transceiver solution mitigated logging errors that could affect post-irradiation analysis, since they are based on a robust industrial protocol that reduces the amount of complex and sensitive components in the irradiation room (e.g., serial to USB converters, USB extenders).…”
Section: Methodsmentioning
confidence: 99%
“…These setups offer a compact and effective testing platform for HARV-SoC. In particular, regarding the configuration memory, the flash-based FPGA provides high immunity to SEEs [27], improving the platform's availability for the experiment. Also, the usage of a custom transceiver solution mitigated logging errors that could affect post-irradiation analysis, since they are based on a robust industrial protocol that reduces the amount of complex and sensitive components in the irradiation room (e.g., serial to USB converters, USB extenders).…”
Section: Methodsmentioning
confidence: 99%
“…While the FPGA configuration memory is flash-based, the Block RAMs (BRAMs) use an SRAM technology, and the Flip-Flops are D-type (DFF). We are using both BRAMS and DFFs in our design, which are susceptible to SEUs, as shown in the device characterization made in [17].…”
Section: Methodsmentioning
confidence: 99%
“…While on Board 0 these failures had fewer occurrences in the non-hardened implementation, Board 2 had fewer occurrences in the hardened implementation. Since the results look inconclusive at first analysis, we used the data from the device characterization made by the FPGA producer in [17] to help their interpretation. For this characterization, several Microsemi devices were tested against neutron radiation, in particular the Smartfusion2 family.…”
Section: Preliminary Soc Characterizationmentioning
confidence: 99%
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“…Since the configuration memory is based on flash memory, it is more robust against single events, as shown by the manufacturer [24]. Although the enhanced reliability of the FPGA hosting the system under test, other internal components of interest are susceptible to SEEs, such as the Block RAMs (BRAMs), which are based on SRAM technology, and D-type Flip-Flops (DFFs), as shown in [25]. This setup is ideal for acquiring high-quality fault model data since only targeted structures are very sensitive to irradiation in an accelerated environment.…”
Section: B Experimental Setupmentioning
confidence: 99%