Negative-differential-resistance effects in the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">TlGaTe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>ternary semiconductor

Hanias, M. P.; Anagnostopoulos, A. N.

doi:10.1103/physrevb.47.4261

Cited by 61 publications

(45 citation statements)

References 20 publications

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“…A shift of resonance toward a lower potential, when the temperature decreases, can be attributed to lowering of external circuit series resistance. [54][55][56][57][58][59] It is believed that PVCR diminishes mainly due to an increase in valley current at a much faster rate than the peak current increases with an increase in temperature. An effect of inelastic scattering, primarily caused by phonons and scattering at the interface, is more prominent at higher temperatures.…”

Section: Series Connection Of Two Tunnel Diodes (T-nta/t-np/ Cztsmentioning

confidence: 99%

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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The resistive switching behavior of TiO 2 based electronic devices have been extensively investigated the last two decades due to their low cost and potential applications in high speed electronic devices. However, the randomness in switching behavior and uncertainty in conducting filament formation often restricts their usage for long-term applications. A duality in current transport mechanism was observed when nano-architectural parameters of the TiO 2 memory resistance device were altered. TiO 2 nanotube-CZTS nanocrystals based devices exhibit Fowler-Nordheim quantum tunneling, whereas TiO 2 nanocrystals-CZTS thin film based devices exhibit space charge limited conduction. Temperature dependent electrical studies indicate that polaronic transport is one of the phenomena assisting in electrical conduction. Electronic band information suggests that tunneling between CZTS and TiO 2 is indirect. A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of Low cost electrical bistability due to nonlinear conducting behavior has been an exciting area of research in recent years. [1][2][3][4][5][6][7][8] Several new devices such as tunnel diodes, multivibrators, and organic bistable systems have been investigated.1-7 Some of these devices possess unique I-V characteristics and non-conventional current transport mechanisms. Devices showing negative differential resistance (NDR) can be utilized for various low power applications such as radio frequency, logic and neuromorphic devices, fast switching, and high frequency oscillators.1-7,9-11 Materials such as carbon nanotubes, graphene, and conducting polymers have been recently utilized for room temperature NDR behavior or memory resistance applications. [1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .14 Thin film memory resistors offer advantages such as high switching speed and low energy electroforming. The use of thin film TiO 2 in a memory resistor has demonstrated potential dependent on/off switching when sandwiched between two platinum contacts. 15 It is generally believed that a memoresistance effect in TiO 2 nanostructures is based on the mobility of vacancies or defects. [15][16][17] The conduction mechanism is based on the formation and transport of conducting filament (CF). A conducting filament generally consists of oxygen vacancies that form or break due to electric field driven migration. Because of randomness and uncertainty in CF's formation, resistance-switching (RS) devices often perform randomly and thus have less control over operating parameters. Another report suggests that Joule heating is also a major cause for current controlled negative resistance behavior. 18 This behavior relies on polaronic transport in TiO 2 . In polaronic transport, the hopping motion of small polarons up to certain temperatures influences conduction. Several other mechanisms and switching modes such...

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Section: Series Connection Of Two Tunnel Diodes (T-nta/t-np/ Cztsmentioning

confidence: 99%

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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“…The function (x) represents the potential energy dependent on the distance to an impurity centre or a trap (x is the distance along the direction of the applied field) and varies under the effect of an electric field (Hanias, 1993). It follows from the results published in (Hill, 1971 andVolkov, 1972) …”

Section: Effects Induced By -Irradiationmentioning

confidence: 87%

“…In Aldzhanov et al (1985) and Aliev et al (1987) it is reported about the second-order phase transition at a temperature of 98.5 K. Hanias (1993) studying detected the current-voltage (I-V) characteristics of a TlGaTe2 crystal, detected the effect of negative differential resistance and voltage oscillations in the region of negative differential resistance.…”

Section: Introductionmentioning

confidence: 99%

Superionic Conductivity and Specific Effects Induced by γ-Radiation in Nanofibrous TlGaTe2 Crystals

Sardarly¹,

Самедов²,

Aliyeva³

et al. 2012

IJTAN

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“…Next, we proceed to the analysis of the obtained chaotic time series following the method proposed by Grassberger and Procaccia (Grassberger & Procaccia, 1983) and successfully applied in similar cases (Hanias & Anagnostopoulos, 1993). Additionally, according the Takens theory (Takens, 1981), the measured time series can be used to reconstruct the original phase space.…”

Section: Non-linear Analysismentioning

confidence: 99%