The Brillouin scattering method is used to investigate the temperature dependence of the elastic coefficients of TlInS and TlGaSe for propagation of the longitudinal &ode in the fool) plane or perpendicular to it. In T11nS2 clear anomalies are observed near the phase transitions at T = 2 1 3 K and T = 189 K but in TIGaSeZ these changes are less prominent. Possible mechanisms behind these observations are briefly discussed.
Temperature-dependent dielectric and conduction properties of the impurity-doped and gamma-irradiated samples of TlInS 2 semiconductor-ferroelectric with incommensurate phase are presented. As found, in both cases a stable relaxor state is emerging in the material with temperature provided that the central ion in InS 4 tetrahedron is replaced by an impurity atom such as Mn or Cr, or radiation dose exceeds 400 Mrad. Same as NMR-studies, the present work drives to a conclusion that In-displacements are among the components of the order parameter of the incommensurate phase transition. The origin of the non-activated conductivity observed in the relaxor state of TlInS 2 is assumed to be resonance tunneling executed by charge carriers from electron levels in the band gap through potential barriers created by incommensurate superstructure.
Ternary semiconductors with the formula ABX have been investigated extensively 2 in recent years and have found applications in non-linear optic and optoelectronic devices. The thallium dichalcogenides TlBX (BE Al, Ga; In: X = S, Se, Te) are a
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