Raman and Infrared Spectra of TlGaSe<sub>2</sub>

Allakhverdiev, K. R.; Sardarly, R. M.; Wondre, F. R.; Ryan, John F.

doi:10.1002/pssb.2220880145

Cited by 27 publications

(9 citation statements)

References 5 publications

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“…Среди соединений, которые можно объединить обшей формулой TlВ III С VI 2 , особое место занимают кристаллы с цепочечной и слоистой структурой. Эти соединения проявляют высокую чувствительность в инфракрасной, видимой и рентгеновских областях спектра [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Благодаря этим свойствам соединения используются (и могут быть использованы) как функциональные элементы в системах оптоэлектроники в качестве фоторезисторов, фотоприемников, рентген-детекторов, детекторов ядерного излучения и др.…”

Section: Introductionunclassified

Импедансные характеристики γ-облученных твердых растворов (TlGaSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(TlInS-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

Сардарлы¹,

Салманов²,

Алиева³

et al. 2020

Физика И Техника Полупроводников

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Методами импедансной спектроскопии исследованы процессы переноса заряда в твердых растворах (TlGaSe2)1-x(TlInS2)x в диапазоне частот 20-106 Гц до и после γ-облучения. Установлен релаксационный характер дисперсии диэлектрической проницаемости, а также природа диэлектрических потерь. Частотная зависимость тангенса угла диэлектрических потерь (tg delta) в кристаллах твердых растворов (TlGaSe2)1-x(TlInS2)x обусловлена не только релаксационной поляризацией, но и сквозной проводимостью. Рассчитаны значения времени релаксации tau=10-3 с. Установлено, что в частотном интервале 105-5·105 Гц для электропроводности выполняется закономерность sigma~ fS (0.1≤ S≤1.0), указывающая на проводимость по локализованным состояниям. Дальнейший рост частоты приводит к росту ионной проводимости переходу системы в суперионное состояние. Ключевые слова: твердые растворы, диэлектрическая проницаемость, время релаксации, диэлектрические потери, проводимость, импеданс.

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Section: Introductionunclassified

Импедансные характеристики γ-облученных твердых растворов (TlGaSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(TlInS-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

Сардарлы¹,

Салманов²,

Алиева³

et al. 2020

Физика И Техника Полупроводников

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“…Ternary thallium chalcogenides with the chemical formula TlBX 2 (where B = Ga, In; X = S, Se, Te) are a comparatively new group of 2D semiconductors, belonging to the III-III-VI 2 family of crystals [24,25]. Their bulk materials have been extensively investigated in recent years and have found applications in nonlinear optical, acousto-optical and optoelectronic devices, due to their excellent optical and electrical properties [26,27].…”

Section: Introductionmentioning

confidence: 99%

Ultrathin ternary semiconductor TlGaSe ₂ phototransistors with broad-spectral response

Yang¹,

Wu²,

Wang³

et al. 2017

2D Mater.

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Ternary layered III-III-VI 2 -type metal chalcogenides are a comparatively new group of semiconductors and have attracted strong interest due to their distinct optical and electrical properties in view of potential applications in nonlinear optical, acousto-optical and optoelectronic devices. Here, we report on the fabrication of two-terminal phototransistors based on ultrathin direct-bandgap TlGaSe 2 sheets for the first time. Devices exhibit typical p-type conducting behaviors with current on/off ratio of ~10 2 and gate-tunable transport characteristics. The photocurrent presents stable and reproducible response for various wavelengths of light from ultraviolet (UV) to near-infrared region, confirming the broadband photodetection capability. Photoresponsive behavior of ultrathin TlGaSe 2 phototransistors can be modulated by the incident optical power density or wavelength, as well as bias or back-gate voltages. Owing to the presence of direct bandgap, devices possess high photoresponsivity (270 mA W −1 ) under white light in vacuum, and it is higher than that of single-layer MoS 2 phototransistor and graphene photodetectors, accompanying by a fast response time of ~0.2 s. Our studies introduce ternary alloy monochalcogenides phototransistors, and expand the library of ultrathin flexible semiconductors.

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“…Clearly pronounced cleavage in the (001) plane reflects the main structural peculiarity of this class of solids: the presence of layers consisting of MeCh 4 tetrahedrons (where Me and Ch stand for the metal (In, Ga) and the chalcogen (S, Se), respectively) with Tl 1+ cations between them 1, 2. The presence of the low‐temperature and high‐pressure phase transitions (PTs) 2–7 led to increasing interest in investigation of their vibration and electronic properties (see Refs. 8–31 and references therein, including Refs.…”

Section: Introductionmentioning

confidence: 99%

Lattice dynamics of layered semiconducting compound TlGaS₂

Kulibekov

Hashimzade

Huseinova

et al. 2010

Physica Status Solidi (b)

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In this paper we present the results of ab initio calculations of the lattice dynamics of ternary TlGaS 2 semiconductor with highly anisotropic crystal structure. Calculations have been performed using the open-source code ABINIT on the basis of density functional theory within the plane-wave pseudopotential approach. The results are discussed in terms of previously existing experimental data. Calculated frequencies of the phonon modes at the center of the Brillouin zone, as well as calculated IR reflection spectra in the range of 15-500 cm À1, are in reasonable agreement with existing experimental data. The theoretical temperature dependence (up to room temperature) of the heat capacity is in good agreement with experimental data.

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Raman and Infrared Spectra of TlGaSe₂

Abstract: Ternary semiconductors with the formula ABX have been investigated extensively 2 in recent years and have found applications in non-linear optic and optoelectronic devices. The thallium dichalcogenides TlBX (BE Al, Ga; In: X = S, Se, Te) are a

Cited by 27 publications

References 5 publications

Импедансные характеристики γ-облученных твердых растворов (TlGaSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(TlInS-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

Импедансные характеристики γ-облученных твердых растворов (TlGaSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(TlInS-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

Ultrathin ternary semiconductor TlGaSe ₂ phototransistors with broad-spectral response

Lattice dynamics of layered semiconducting compound TlGaS₂

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Raman and Infrared Spectra of TlGaSe2

Abstract: Ternary semiconductors with the formula ABX have been investigated extensively 2 in recent years and have found applications in non-linear optic and optoelectronic devices. The thallium dichalcogenides TlBX (BE Al, Ga; In: X = S, Se, Te) are a

Cited by 27 publications

References 5 publications

Импедансные характеристики &gamma;-облученных твердых растворов (TlGaSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(TlInS-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

Импедансные характеристики &gamma;-облученных твердых растворов (TlGaSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(TlInS-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

Ultrathin ternary semiconductor TlGaSe 2 phototransistors with broad-spectral response

Lattice dynamics of layered semiconducting compound TlGaS2

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Raman and Infrared Spectra of TlGaSe₂

Импедансные характеристики γ-облученных твердых растворов (TlGaSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(TlInS-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

Импедансные характеристики γ-облученных твердых растворов (TlGaSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(TlInS-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

Ultrathin ternary semiconductor TlGaSe ₂ phototransistors with broad-spectral response

Lattice dynamics of layered semiconducting compound TlGaS₂