Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates

Choi, Jun Hee; Zoulkarneev, A.R.; Kim, Sun Il; Baik, Chan Wook; Yang, Min; Park, Sung Soo; Suh, Hwansoo; Kim, Un Jeong; Son, Hyung Bin; Lee, Jae Soong; Kim, Miyoung; Kim, Jong Min; Kim, Kinam

doi:10.1038/nphoton.2011.253

Cited by 164 publications

(106 citation statements)

References 34 publications

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“…34 Fourth, our approach is compatible with current large-area wafers and processing techniques. 35 If the number of QDs on a GaN EHPs is reduced, site-controlled QDs with controlled separation will facilitate the fabrication of ultracompact single-photon emitters with controllable photon polarization vectors on a single chip. …”

Section: Discussionmentioning

confidence: 99%

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

et al. 2014

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Semiconductor quantum dots (QDs) have been demonstrated viable for efficient light emission applications, in particular for the emission of single photons on demand. However, the preparation of QDs emitting photons with predefined and deterministic polarization vectors has proven arduous. Access to linearly polarized photons is essential for various applications. In this report, a novel concept to directly generate linearly-polarized photons is presented. This concept is based on InGaN QDs grown on top of elongated GaN hexagonal pyramids, by which the predefined elongation determines the polarization vectors of the emitted photons from the QDs. This growth scheme should allow fabrication of ultracompact arrays of photon emitters, with a controlled polarization direction for each individual emitter. Keywords: GaN; InGaN; photoluminescence; polarized emission; quantum dot INTRODUCTION Quantum dots (QDs) have validated their important role in current optoelectronic devices and they are also seen promising as light sources for quantum information applications. An improved efficiency of laser diodes and light-emitting diodes can be achieved by the incorporation of QDs ensembles in the optically active layers.1 In addition, the proposed quantum computer applications rely on photons with distinct energy and polarization vectors, which can be seen as the ultimate demand on photons emitted from individual QDs.2 A common requirement raised for several optoelectronic applications, e.g., liquid-crystal displays, three-dimensional visualization, (bio)-dermatology 3 and the optical quantum computers, 4 is the need of linearly polarized light for their operation. For existing applications, the generation of linearly polarized light is obtained by passing unpolarized light through a combination of polarization selective filters and waveguides, with an inevitable efficiency loss as the result. These losses can be drastically reduced by employment of sources, which directly generate photons with desired polarization directions.Conventional QDs grown via the Stranski-Krastanov (SK) growth mode are typically randomly distributed over planar substrates and possess different degrees of anisotropies. The anisotropy in strain field and/or geometrical shape of each individual QD determines the polarization performance of the QD emission. Accordingly, a cumbersome post-selection of QDs with desired polarization properties among the randomly distributed QDs is required for device integration.

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Section: Discussionmentioning

confidence: 99%

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

et al. 2014

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“…The effi ciency of microdonut LEDs is comparable to or several times higher than those of micropyramid and microrod LEDs. [ 11,12 ] Although the internal quantum effi ciency of the GaN microdonut structures is comparable to or even higher than that of the thin fi lm structures, [ 13 ] the wall plug effi ciency of the microstructure and nanostructure LEDs is much lower than those of commercialized thin fi lm LEDs. We believe that the LED effi ciency could be signifi cantly increased by optimizing the materials growth and device fabrication process parameters.…”

Section: Communicationmentioning

confidence: 99%

Variable‐Color Light‐Emitting Diodes Using GaN Microdonut arrays

Tchoe

Kim

et al. 2014

Advanced Materials

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Microdonut-shaped GaN/Inx Ga1-x N light-emitting diode (LED) microarrays are fabricated for variable-color emitters. The figure shows clearly donut-shaped light emission from all the individual microdonut LEDs. Furthermore, microdonut LEDs exhibit spatially-resolved blue and green EL colors, which can be tuned by either controlling the external bias voltage or changing the size of the microdonut LED.

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“…11 Thus, the obstacle to growing large high-quality nitride films on large-size amorphous substrates must be resolved in order to use inorganic LEDs in displays and flat light sources. 12 …”

Section: Introductionmentioning

confidence: 99%

High-quality GaN films grown on chemical vapor-deposited graphene films

et al. 2012

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We report the growth of high-quality GaN films on large-size graphene films for visible light-emitting diodes (LEDs). The graphene films were synthesized by chemical vapor deposition and then transferred onto amorphous silica (SiO 2 ) substrates that do not have an epitaxial relationship with GaN. Before growing the high-quality GaN thin films, ZnO nanowalls were grown on the graphene films as an intermediate layer. The structural and optical characteristics of the GaN films were investigated, and the films exhibited stimulated emission even at room temperature, a highly c-axis-oriented crystal structure, and a preferred in-plane orientation. Visible LEDs that emitted strong electroluminescence under room illumination were fabricated using the GaN thin films.

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Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates

Cited by 164 publications

References 34 publications

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Variable‐Color Light‐Emitting Diodes Using GaN Microdonut arrays

High-quality GaN films grown on chemical vapor-deposited graphene films

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