Variable‐Color Light‐Emitting Diodes Using GaN Microdonut arrays

Abstract

Microdonut-shaped GaN/Inx Ga1-x N light-emitting diode (LED) microarrays are fabricated for variable-color emitters. The figure shows clearly donut-shaped light emission from all the individual microdonut LEDs. Furthermore, microdonut LEDs exhibit spatially-resolved blue and green EL colors, which can be tuned by either controlling the external bias voltage or changing the size of the microdonut LED.

Flexible GaN Light‐Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

“…The observed changes in EL peak positions and FWHM values presumably resulted from non-uniform indium compositions and thicknesses of the QW layers formed on the multifaceted n-GaN microstructures. [32,33] Adv. Mater …”

Simultaneous Growth of Various InGaN/GaN Core‐Shell Microstructures for Color Tunable Device Applications

“…Previous reports have also considered InGaN based nano-rods (NRs) as potential candidates for full nitride color tunable devices. [12,13] Such crystals are appealing as the different facets offer a large color palette and the core-shell structure provides a natural passivation of the overall surface. However, NRs based RGB displays lack color purity.…”

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

“…Wurtzite GaN having desirable properties like large direct band gap of 3.4 eV at room temperature, thermal stability and good resistant to radiation, is a significantly important material which finds applications in light emitting diodes and laser diodes. p-type doping of GaN can improve the performances of such nano-electronic and optoelectronic devices [4,5]. Therefore, addressing the real problems in making p-type and n-type GaN homojunction nanorods invites curious attention as they are found functionally important in above mentioned optoelectronic devices.…”