Nanostructure formation and emission characterization of blue emission InN/GaN quantum well with thin InN well layers

Blue and green emission using In(Ga)N/GaN quantum wells with InN well layers grown by metalorganic chemical vapor deposition

“…This phenomenon is due to a reduced piezoelectric effect by the introduction of the thin well, that is, a reduced QCSE. Therefore, the LED growth with the high In composition and thin well thickness using pure InN can be more advantageous than the conventional InGaN/GaN in fabricating a blue LED [28]. On the other hand, an enhanced blue-shift was observed for the green LED using a thick In(Ga)N well.…”

MOVPE growth and characterization of InN/GaN single and multi-quantum well structures

“…While there are many results on the growth and properties of bulk InN films there are only a few reports on the investigation of InN-based quantum well (QW) structures, usually by molecular beam epitaxy [1][2][3][4][5][6]. Blue and/or near UV emission has been observed from metal organic vapour-phase epitaxy (MOVPE) grown ultra-thin InN or high indium (In) containing InGaN layers within GaN barriers [7][8][9][10]. Such light emission, far from the band edge (0.7-1 eV) of InN, has been attributed to nanostructure formation in the InN layer [7,8] or due to a large shift in emission energy arising from quantum confinement in very thin (1 ML) layers [6,9].…”

“…Blue and/or near UV emission has been observed from metal organic vapour-phase epitaxy (MOVPE) grown ultra-thin InN or high indium (In) containing InGaN layers within GaN barriers [7][8][9][10]. Such light emission, far from the band edge (0.7-1 eV) of InN, has been attributed to nanostructure formation in the InN layer [7,8] or due to a large shift in emission energy arising from quantum confinement in very thin (1 ML) layers [6,9]. The growth of InN/GaN QWs is especially difficult due to both the large lattice mismatch of 11% as well as large difference in optimal growth temperature.…”

Comparative cathodoluminescence characterization of ultrathin InN wells/GaN matrix MQWs grown on bulk‐GaN and MOVPE‐GaN

“…Thus, the proposed ultrathin InN/GaN MQWs are expected to be new active regions for higher efficiency light emitting devices due to the effects of reduced defects, reduced inhomogeneity/structural fluctuations, and ultimately minimized QCSE than that in conventional InGaN active layer QWs [13][14][15]. However, it has been revealed in a previous study of ultrathin InN/GaN MQWs by scanning electron microscopy (SEM) and cathodoluminescence (CL) measurements that macroscopic surface defects appearing as spiral hillocks around screw-component threading dislocations seriously degrade not only the structural quality but also optical properties of nano-heterostructures [16,17].…”