Blue and green emission using In(Ga)N/GaN quantum wells with InN well layers grown by metalorganic chemical vapor deposition

Kong, Bo Hyun; Kim, Dong Chan; Cho, Hyung Koun; Lee, Kyu Han; Kim, Je Won; Kim, Bong Jin

doi:10.1016/j.jcrysgro.2006.11.211

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Non-ideal energy selective contacts and their effect on the performance of a hot carrier solar cell with an indium nitride absorber

Feng¹,

Aliberti²,

Puthen-Veettil³

et al. 2012

Applied Physics Letters

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The hot carrier solar cell is a third generation photovoltaic device that extracts photo-generated carriers before they thermalise. In this work, the efficiency of a hot carrier solar cell with a 50 nm indium nitride (InN) absorber layer has been calculated, taking into account the realistic transport properties of energy selective contacts. The cell performance has been modeled considering the carrier extraction through contacts as ballistic. A potential practical implementation of a hot carrier solar cell, with contacts based on an InXGa1−XN/InN/InXGa1−XN quantum well structure, has been proposed, with calculated maximum efficiency of 37.15% under 1000 suns.

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