The authors propose and demonstrate the fabrication of InN∕GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN∕GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors.
[1] Vibrational excitation of ground-state NO through collisions with oxygen atoms produces NO(v = 1) in the lower thermosphere, representing a significant source of atmospheric cooling through the subsequent 5.3-mm radiative emission. A laser pumpprobe experiment has been used to measure the temperature dependence of the NO(v = 1)-O vibrational relaxation rate coefficient k O (v = 1) in the 295-825 K range, along with updated measurements of k O (v = 1,2) at room temperature. The experiment employed a continuous wave microwave source to form O atoms, combined with photolysis of a trace amount of added NO 2 to produce vibrationally excited NO. Oxygen atoms were detected through two-photon laser-induced fluorescence, cross-calibrated against a normalized O atom signal resulting from photolysis of a known concentration of NO 2 . No temperature dependence was observed for k O (v = 1) to within the uncertainty in the measurements. The measured room temperature value of k O (v = 1) = (4.2 ± 0.7) Â 10 À11 cm 2 s À1 is 75% larger than the value obtained previously in this laboratory, a significant difference at the 1s level. The present value is preferred owing to an improved experimental technique. The atmospherically relevant NO(v = 0)-O vibrational excitation rate coefficient can be derived from measured values of k O (v = 1) through detailed balance. The variable temperature measurements provide key information for aeronomic models of the lower thermospheric energy budget, infrared emission intensities, and neutral constituent densities.
Removal rate coefficients for NO(B 2Π) in the v=2 and 3 levels are measured at 230 K for seven colliders: NO, N2O, CO2, O2, N2, Ar, and He. These measurements are the first below room temperature and are compared to earlier 295 K measurements. These NO(B 2Π) vibrational levels differ from each other in that the v=2 level is unperturbed, and the v=3 level is significantly perturbed by the v=12 level of the a 4Π state. Although there are large variations in removal rate coefficients between the two B 2Π vibrational levels, the effect of reducing the temperature on the removal rate coefficients is modest, the largest effects occurring with the least effective colliders, He and Ar.
Observation and characterization of the ArBH(X 1Σ+,A 1Π) van der Waals complex through fluorescence excitation spectroscopy Spectroscopy of the indium argon van der Waals complex: A high resolution study of the B 2Σ1/2←X2 2Π3/2 system J. Chem. Phys. 99, 4300 (1993); 10.1063/1.466083Van der Waals bonding in the lowest electronic states of MgAr, ZnAr, CdAr, and HgAr: Spectroscopic characterization of the b 3Π2 and e 3Σ+ states of the CdAr moleculeThe BAr van der Waals complex and its electronic transition correlating with the B atom 3s 2S-2p 2p transition have been characterized in a combined experimental and theoretical investigation. The experimental portion of the study consisted of the observation by laser fluorescence excitation of rotationally resolved bands of this molecule in a supersonic jet. Specifically, four bands of the (v/,O) progression of the B 2l;+ -x 2nl/ 2 band system of each of the ll'!~Ar isotopomers were observed and analyzed, where the upper state vibrational quantum numbers v' =4-7 were determined from the isotope splittings. Vibrational and rotational constants were obtained through fits to the observed transition wave numbers. These experimental results were compared with ab initio calculations of the X 2IT, A 2l; +, and B 2l; + electronic states of BAr. In order to obtain the interaction energies of the excited states of this weakly bound system accurately, multireference, internally contracted, configuration-interaction calculations were carried out, with additional provision for the effect of higher order excitations. The information derived about these states from the experiment and calculations agree reasonably well. An interesting feature of the BAr B 2l; + state is the presence of a barrier in the potential energy curve.
We report a new investigation of the interaction between atomic boron, in both the ground 2p 2P and excited 3s 2S electronic states, with Ne. BNe complexes are formed in a pulsed free jet expansion and detected by laser fluorescence excitation. A broad, asymmetric feature is seen, with maximum intensity ∼270 cm−1 to the blue of the 3s 2S–2p 2PJ atomic transition. This feature corresponds to electronic excitation from the ground vibrational level of the BNe(X 2Π1/2) state into the BNe(B 2Σ+) state, which is unbound. High level ab initio configuration–interaction calculations, involving large atomic orbital bases, were carried out to describe the relevant potentials. The potential curve for the B state reveals a broad shoulder, but no well. The calculated potential curves are corrected, very slightly, by an additional scaling of the correlation energy. Spectral simulations based on these corrected curves reproduce, nearly quantitatively, the experimental spectrum.
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