Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

Abstract

The authors propose and demonstrate the fabrication of InN∕GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN∕GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors.

Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well

“…High quality InN layers in GaN matrix with a thickness of 1-2 ML and atomically sharp interfaces have already been fabricated [31,32]. Both photoluminescence [31] and electroluminescence [33] originating from electronhole recombination have been observed.…”

High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

“…After this, important improvements were achieved regarding smaller sizes and higher densities [101][102][103][104][105][106][107], and recently the emission, even very poor, of InN QDs [108,109] and growth and optical properties of cubic InN dots [110] have been reported. Other types of InN nanostructures fabricated so far include single [111] and multiple [112][113][114][115] quantum wells, nanocolumns [116,117], and nanowires [118][119][120]. However, even if the number of publications related to these nanomaterials has increased considerably during the last years, the number of them including characterization by HRTEM still remains scarce.…”

Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

“…Recent growth of InN materials is also strongly progressive and indicative of potential device application. 5,6 Again, this is in spite of the difficulties of the growth of high quality InN film because of its thermal instability and the lattice mismatch between GaN and InN ($11%). Using these kinds of InN growth techniques, an improvement of interfacial abruptness and a reduction of well thickness in high-In-content InGaN/GaN heterostructures by the decomposition and mass transport process during growth interruption (GI) has been accomplished.…”