Comparative cathodoluminescence characterization of ultrathin InN wells/GaN matrix MQWs grown on bulk‐GaN and MOVPE‐GaN

National Natural Science Foundation [60827004, 90921002, 60776066]; Fujian and Xiamen projects of ChinaThe near-ultraviolet (UV) light emitting diodes (LED) using ultrathin InN/GaN quantum well (QW) are fabricated by metal organic vapor phase epitaxy. The x-ray diffraction measurement shows well-defined satellite peaks, which implies abrupt interfaces and good layer periodicity of the QWs. The electroluminescence only exhibits a near-UV emission centered at approximately 3.14-3.18 eV without other emission peaks even the common yellow luminescence, which further confirms the advantages of the near-UV LED especially the minimization of phase separation, interdiffusion, and defects in the QWs. The near-UV emission is found to be stable even under high pulsed injection-current in contrast to the conventional InGaN based LED. This behavior indicates effective avoidance of the redshift related to the many body effect as well as the blueshift induced by band filling effect, localized states in the barrier, and the quantum confined stark effect. The realization of the near-UV LED using the ultrathin InN/GaN QW would facilitate the application of near-UV solid-state lighting source. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3360199

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Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

Yoshikawa

Kusakabe

Hashimoto

et al. 2016

Journal of Applied Physics

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The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ∼1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an “In+N” bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (∼500 °C). The “In+N” bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

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Comparative cathodoluminescence characterization of ultrathin InN wells/GaN matrix MQWs grown on bulk‐GaN and MOVPE‐GaN

Cited by 3 publications

References 13 publications

Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System

Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System

Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

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