Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy

Abstract

National Natural Science Foundation [60827004, 90921002, 60776066]; Fujian and Xiamen projects of ChinaThe near-ultraviolet (UV) light emitting diodes (LED) using ultrathin InN/GaN quantum well (QW) are fabricated by metal organic vapor phase epitaxy. The x-ray diffraction measurement shows well-defined satellite peaks, which implies abrupt interfaces and good layer periodicity of the QWs. The electroluminescence only exhibits a near-UV emission centered at approximately 3.14-3.18 eV without other emission peaks even the common yellow luminescence, which further confirms the advantages of the near-UV LED especially the minimization of phase separation, interdiffusion, and defects in the QWs. The near-UV emission is found to be stable even under high pulsed injection-current in contrast to the conventional InGaN based LED. This behavior indicates effective avoidance of the redshift related to the many body effect as well as the blueshift induced by band filling effect, localized states in the barrier, and the quantum confined stark effect. The realization of the near-UV LED using the ultrathin InN/GaN QW would facilitate the application of near-UV solid-state lighting source. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3360199

Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

“…The fabrication of very thin InN QWs in a GaN matrix with width from 1 to 5 monolayers of InN [1][2][3][4][5]13,14 layer in these SLs is composed of a binary InN, problems encountered in the development of conventional InGaN/GaN QWs with high In contents, such as compositional fluctuation, can to a high extent be avoided. This motivated us to study the dependence of the band gap, E g , on layer thicknesses in mInN/nGaN(0001) SLs with a few monolayers of InN (m = 1 to 6) and with the same or higher number of GaN monolayers, n ≥ m. We compare them with the band gaps of In x Ga 1−x N alloys.…”

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

“…In addition, we expect InN to have the highest electron mobility among III-nitrides (approximately 4400 cm 2 /V•S). These characteristics will enable InN to be considered a highly potential application material in many optoelectronic fields, such as high-speed electronic devices (HEMT), optoelectronic detectors, and photovoltaic and light-emitting devices [2][3][4][5]. However, due to a large number of external defects such as dislocation, defects, and so on, practical InN-based devices are still not achievable [6,7].…”

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

“…InN, as one of the members in the III-nitrides group, has attracted intensive interest ever since being discovered with a narrow band gap (e.g., ~0.7 eV) by Davydov et al [1] and is predicted to have the highest electron mobility among the III-nitrides group (~4400 cm 2 /V•s). These characteristics mentioned above make InN a potential material in high-speed electronic device (HEMT), photodetectors, solar cells and light-emitting devices [2][3][4][5]. However, practical application is still limited by the large number of defects, which is caused from dislocations, native and extrinsic defects such as threading dislocations, V N , Si, O and H [6,7].…”