Nanoscale Rear-Interface Passivation in Cu₂ZnSn(S,Se)₄ Solar Cells through the CuAlO₂ Intermediate Layer

Abstract

The present work demonstrates that the addition of p-type CuAlO 2 (CAO) as an intermediate layer between molybdenum (Mo) and the absorber rear interface efficiently improves the Cu 2 ZnSn(S,Se) 4 (CZTSSe) device performance. The efficacy of the intermediate layer is analyzed through sputtering the CAO nanolayer at different deposition times on top of the Mo layer. The addition of an ultrathin CAO nanolayer improved the absorber bulk quality with the formation of compact and larger crystalline grains. Furthermore, the CZTSSe device with an optimum deposition time (154 s) of the CAO nanolayer successfully reduced the Mo(S,Se) 2 layer thickness from ∼50 to ∼25 nm. This reduced Mo(S,Se) 2 layer thickness results in the reduced series resistance (R s ) in the device providing improvement in the overall device performance. The short-circuit current density (J SC ) and the power conversion efficiency of the device with the CAO nanolayer increased from 33.48 to 35.40 mA/cm 2 and from 9.61 to 10.54%, respectively, compared to a reference device.

Bi-doped SnO2 transparent conducting thin films deposited by spray pyrolysis: structural, electrical, optical, and photo-thermoelectric properties

“…Recently, binary transparent oxides of n-type and p-type TCO materials have been developed such as n-Zn 2 SnO 4 [7,8], n-MgIn 2 O 4 [9], n-CdSb 2 O 6 :Y [10], n-ZnSnO 3 [11], p-CuAlO 2 [12], p-CuGaO 2 [13], p-SrCu 2 O 2 [14], p-ZnO:(Ga, N) [15] and p-NiO : Li [16,17]. Therefore, the use of n-type and p-type TCOs in the fabrication of active elements in optoelectronic devices as transparent p-n junctions is possible [18][19][20][21][22][23][24][25].…”

Efficiency Improvement of Flexible Cu2ZnSn(S,Se)4 Solar Cells by Window Layer Interface Engineering

“…Zhang et al reduced the R s and increased the R sh by applying the VSe 2 layer to the back interface of the CZTSSe device, which improved the average PCE to 6.16% . At present, the relevant research studies mainly focus on the secondary phases of the interfaces and CZTS/Mo interface. − However, the front contact such as window layers is also important for the V oc and FF, and it needs to be further studied.…”

Bi-Doped SnO2 Transparent Conducting Thin Films Deposited By Spray Pyrolysis: Structural, Electrical, Optical And Photo-Thermoelectric Properties

“…Recently, binary transparent oxides of n-type and p-type TCO materials have been developed such as n-Zn 2 SnO 4 [7,8], n-MgIn 2 O 4 [9], n-CdSb 2 O 6 :Y [10], n-ZnSnO 3 [11], p-CuAlO 2 [12], p-CuGaO 2 [13], p-SrCu 2 O 2 [14], p-ZnO:(Ga, N) [15] and p-NiO : Li [16,17]. Therefore, the use of n-type and p-type TCOs in the fabrication of active elements in optoelectronic devices as transparent p-n junctions is possible [18][19][20][21][22][23][24][25].…”