SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

The main cause of the large open-circuit voltage (Voc)-deficit in kesterite-based thin-film solar cells (TFSCs) is the high concentration of defects, related defects clusters, and poor band tailing characteristics. We...

Three kesterite thin-film solar cells, Cu2ZnSnSe4 (CZTSe), Cu2ZnSn(S,Se)4 (CZTSSe), and Cu2ZnSnS4 (CZTS), and based on low light intensity measurements, examined the possibility of using kesterite devices for indoor applications.

Recently, Cu2ZnSn(S,Se)4 (CZTSSe)‐based kesterite thin films have received growing attention in a wide variety of fields due to their suitable physico‐chemical asset nano‐ and micro‐scale. The low elemental cost, earth abundance, and environment‐friendly nature have widened the scope and made it a potential material for developing next‐generation technology. The kesterite thin films have already shown their potential in thin‐film photovoltaics (PVs) with a record efficiency of nearly 12.6%. Apart from solar cells, they have also demonstrated their widespread applicability in the field of photodetectors, gas sensors, thermoelectrics, solar water splitting, energy storage, humidity sensors, antibacterial activities, and many more. This review aims to present an overview of the advancement in the CZTSSe‐based kesterite thin films in terms of synthesis, material properties, and their use in various applications. A comprehensive review of each device application contains ongoing progress, device fabrication, and related issues. Furthermore, this review emphasizes kesterite materials and possible solutions to proposed pitfalls, thus strengthening kesterite's perspective.

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Ni–Fe-based electrode materials are promising candidates for the oxygen evolution reaction (OER). The synergy between Fe and Ni atoms is crucial in modulating the electronic structure of the active site to enhance electrochemical performance. Herein, a simple chemical immersion technique was used to grow Ni–Fe oxalate nanowires directly on a porous nickel foam substrate. The as-prepared Ni–Fe oxalate electrode exhibited an excellent electrochemical performance of the OER with ultralow overpotentials of 210 and 230 mV to reach 50 and 100 mA cm–2 current densities, respectively, in a 1 M KOH aqueous solution. The excellent OER performance of this Ni–Fe oxalate electrode can be attributed to its bimetallic composition and nanowire structure, which leads to an efficient ionic diffusion, high electronic conductivity, and fast electron transfer. The overall analysis indicates a suitable approach for designing electrocatalysts applicable in energy conversion.

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The present work demonstrates that the addition of p-type CuAlO 2 (CAO) as an intermediate layer between molybdenum (Mo) and the absorber rear interface efficiently improves the Cu 2 ZnSn(S,Se) 4 (CZTSSe) device performance. The efficacy of the intermediate layer is analyzed through sputtering the CAO nanolayer at different deposition times on top of the Mo layer. The addition of an ultrathin CAO nanolayer improved the absorber bulk quality with the formation of compact and larger crystalline grains. Furthermore, the CZTSSe device with an optimum deposition time (154 s) of the CAO nanolayer successfully reduced the Mo(S,Se) 2 layer thickness from ∼50 to ∼25 nm. This reduced Mo(S,Se) 2 layer thickness results in the reduced series resistance (R s ) in the device providing improvement in the overall device performance. The short-circuit current density (J SC ) and the power conversion efficiency of the device with the CAO nanolayer increased from 33.48 to 35.40 mA/cm 2 and from 9.61 to 10.54%, respectively, compared to a reference device.