Tin-selenide as a futuristic material: properties and applications

Abstract

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

Single source precursor route to nanometric tin chalcogenides

“…Two-dimensional atomically thin semiconductor nanostructures, like tin monochalcogenides SnE (E = S, Sn) and tin dichalogenides SnE 2 (E = S, Se), have been attracting worldwide attention due to their exceptional electrical and optical properties, and their potential applications in nanoscale electronics, photonics and functional materials as well as semiconducting and optical devices. [1][2][3][4][5] Mono or few layered 2D van der Waals (vdW) tin-based chalcogenide materials are distinguished in their chemical and physical properties 6,7 as compared to their bulk counterparts. Additionally, these layered vdW materials have the advantage of their constituent elements being abundant in nature and not posing any health and environmental hazards.…”

Photosensitive Schottky barrier diodes based on Cu/p-SnSe thin films fabricated by thermal evaporation

“…Eqn (9) predicts a straight line with a +1/2 slope when plotting F(V) against V. A straight line is drawn on the F(V) vs. V plot for the imposed forward bias. According to eqn (10), it may be conceivable to calculate the lowest value of F(V) that will yield the barrier height (F b ).…”

“…[1][2][3][4][5][6] TMCs that are formed through strong in-plane covalent bonding in individual atomic layers and weak van der Waals interactions between two adjacent layers have attracted a great deal of attention over the past decade as a class of layered materials. 7 Because of its low energy band gap (0.9-1.3 eV), tin selenide [8][9][10] (SnSe) has become a popular TMC for the fabrication of a wide range of devices. SnSe is a member of the IV-VI group of layered semiconductors exhibiting an orthorhombic structure and the space group Pnma at room temperature.…”

Optical and dielectric properties of potassium-doped tin selenide polycrystals

“…Tin selenide (SnSe) is one of the most promising materials among the IV-VI metal chalcogenide semiconductors due to its interesting electrical and thermal properties. From the last decade, it has been used in many applications, such as thermoelectrics, supercapacitors, Li-ion batteries, photovoltaics, solar cells, photocatalysis, gas sensors, optoelectronics, and memory switching devices, due to its desirable properties [1,2]. SnSe is a narrow bandgap semiconductor having an indirect bandgap of 0.9 eV and a direct bandgap of 1.3 eV in bulk form [3][4][5][6].…”