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2021
DOI: 10.1021/acsaem.1c03149
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Efficiency Improvement of Flexible Cu2ZnSn(S,Se)4 Solar Cells by Window Layer Interface Engineering

Abstract: Flexible Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells have wide application prospects. N-type window layers and contact among the layers have an important effect on the properties of flexible CZTSSe solar cells. Here, we present a modified structure for flexible CZTSSe solar cells with window layers (CdS/ITO) instead of the traditional window layers (CdS/ZnO/ITO) for higher performance and lower cost. The flexible CZTSSe device realizes 9.2% efficiency with an improved fill factor (FF) from 57.7 to 63.6%. Systematic… Show more

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Cited by 14 publications
(15 citation statements)
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“…The detailed parameters are summarized in Table 1. The reduction in the diode factors, including G sh , R s , A, and J 0 , reveals CZTSSe absorbers with high quality and clearly indicates the much lower recombination rate of photogenerated carriers, producing an important enhancement in J sc , FF, and hence PCE [34,35].…”
Section: Resultsmentioning
confidence: 99%
“…The detailed parameters are summarized in Table 1. The reduction in the diode factors, including G sh , R s , A, and J 0 , reveals CZTSSe absorbers with high quality and clearly indicates the much lower recombination rate of photogenerated carriers, producing an important enhancement in J sc , FF, and hence PCE [34,35].…”
Section: Resultsmentioning
confidence: 99%
“…In recent years, the power conversion efficiency (PCE) of FCSs has developed rapidly and has exceeded 11%, as shown in Figure 1b. In the research, flexible glass, [ 39 ] polyimide, [ 40,41 ] and metal foils [ 42–69 ] are used as flexible substrates. The FCSs reported in recent years are mostly fabricated on Mo foils, stainless steel (SS) foils, and Ti foils.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, thinning the CdS layer leads to an increase in the R s of the device, indicating an unfavorable charge transport process, and the large R s is detrimental to the FF of the device as well as degrades the device performance. [ 28–32 ] When the CdS layer is further thinned from 10 to 0 nm, the PCE of the device drops sharply from 5.3% to 1.0%. The R s of the device increases slightly, while the G sh increases obviously from 1.94 to 62.21 mS cm −2 .…”
Section: Resultsmentioning
confidence: 99%
“…The CZTSSe film was prepared on the Mo foil by spin coating and selenization annealing as our previous report. [ 28 ] The CdS film (60 nm) was prepared by the CBD method. The ZnO layer (≈50 nm) and the ITO layer (≈220 nm) were prepared by RF sputtering, respectively.…”
Section: Methodsmentioning
confidence: 99%