Abstract:In this research, light and heavy Bi-doped SnO 2 thin lms were prepared on glass substrates by spray pyrolysis technique. The effect of heavy doped-Bi on the structural, morphological, electrical, photothermo-electrical, optical properties of SnO 2 lms has been investigated.The Bi/Sn atomic ratios (x = [Bi/Sn]) were varied from 0 to 0.30 in the spray solution.X-ray diffraction analysis showed the formation of SnO 2 tetragonal rutile structure in low doped deposited lms and amorphous structure for heavy Bi-dope… Show more
“…Yakuphanoglu [11] observed an S value of −500 µV/K a 300 K for a SnO2 thin film coated on an ITO substrate by dip coating, and Trejo-Zamudio et al [31] reported that the maximum S value found was −200 µV/K at 300 K for a SnO thin film Bi-doped by spray pyrolysis, which is consistent with our measurements. In ad dition to this, several previously documented studies on SnO2 and dissimilar metal-doped SnO2 thin films [32][33][34] consistently align with our work in terms of their corresponding Seebeck coefficients. In Figure 5, we present a comparison of data from the reported stud ies on oxide thin films.…”
Previous studies have shown that undoped and doped SnO2 thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO2 and F-doped SnO2 (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation. The film structural quality increases from SnO2 to FTO due to the substitution of F− ions into the host lattice. The film thickness increases from 530 nm for SnO2 to 650 nm for FTO films. Room-temperature electrical resistivity decreases from (8.96 ± 0.02) × 10−2 Ω·cm to (4.64 ± 0.01) × 10−3 Ω·cm for the SnO2 and FTO thin films, respectively. This is due to the increase in the carrier density of the films, (2.92 ± 0.02) × 1019 cm−3 (SnO2) and (1.63 ± 0.03) × 1020 cm−3 (FTO), caused by anionic substitution. It is confirmed that varying the temperature (K) enhances the electron transport properties. The obtained Seebeck coefficient (S) increases as the temperature is increased, up to 360 K. The synthesized films exhibit the S value of −234 ± 3 μV/K (SnO2) and −204 ± 3 μV/K (FTO) at 360 K. The estimated power factor (PF) drastically increases from ~70 (μW/m·K2) to ~900 (μW/m·K2) for the SnO2 and FTO film, respectively.
“…Yakuphanoglu [11] observed an S value of −500 µV/K a 300 K for a SnO2 thin film coated on an ITO substrate by dip coating, and Trejo-Zamudio et al [31] reported that the maximum S value found was −200 µV/K at 300 K for a SnO thin film Bi-doped by spray pyrolysis, which is consistent with our measurements. In ad dition to this, several previously documented studies on SnO2 and dissimilar metal-doped SnO2 thin films [32][33][34] consistently align with our work in terms of their corresponding Seebeck coefficients. In Figure 5, we present a comparison of data from the reported stud ies on oxide thin films.…”
Previous studies have shown that undoped and doped SnO2 thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO2 and F-doped SnO2 (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation. The film structural quality increases from SnO2 to FTO due to the substitution of F− ions into the host lattice. The film thickness increases from 530 nm for SnO2 to 650 nm for FTO films. Room-temperature electrical resistivity decreases from (8.96 ± 0.02) × 10−2 Ω·cm to (4.64 ± 0.01) × 10−3 Ω·cm for the SnO2 and FTO thin films, respectively. This is due to the increase in the carrier density of the films, (2.92 ± 0.02) × 1019 cm−3 (SnO2) and (1.63 ± 0.03) × 1020 cm−3 (FTO), caused by anionic substitution. It is confirmed that varying the temperature (K) enhances the electron transport properties. The obtained Seebeck coefficient (S) increases as the temperature is increased, up to 360 K. The synthesized films exhibit the S value of −234 ± 3 μV/K (SnO2) and −204 ± 3 μV/K (FTO) at 360 K. The estimated power factor (PF) drastically increases from ~70 (μW/m·K2) to ~900 (μW/m·K2) for the SnO2 and FTO film, respectively.
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