Abstract:We demonstrate three-level data storage in amorphous Ge2Sb2Te5 (GST) thin film by conductive atomic force microscopy (C-AFM). Due to the high resolution and current sensitivity of AFM, the electrical properties of GST are investigated in the nanoscale. By applying an electric field between an AFM probe tip and the GST surface, well-resolved threshold switching and memory switching are obtained successively in a current-voltage sweeping. Correspondingly, three states with high, intermediate and low resistances,… Show more
“…One of the most intriguing features of PCRAM arises from its multi-level function that was also observed in phase-change electrical probe memory by Yang et al [ 51 ]. As reported in [ 52 ], the test sample consists of a 10 nm amorphous GST layer and a n-type Si substrate deposited on a metal sample holder via an Ag paste, while the probe tip is made of antimony doped Si coated with Pt-Ir. By changing the bias voltage applied between metal sample holder and probe tip from 0 V to 10 V, the electrical resistance of the GST layer exhibits three distinct states, namely amorphous OFF state, amorphous ON state, and crystalline state, thus indicating three storage levels (e.g., ‘0’, ‘1’, ‘2’).…”
Section: Current Status Of Phase-change Electrical Probe Memorymentioning
confidence: 99%
“…( b ) the corresponding resistance of the amorphous OFF state, amorphous ON state and crystalline state. Reproduced with permission from [ 52 ]. Copyright Iop Science, 2015.…”
Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects.
“…One of the most intriguing features of PCRAM arises from its multi-level function that was also observed in phase-change electrical probe memory by Yang et al [ 51 ]. As reported in [ 52 ], the test sample consists of a 10 nm amorphous GST layer and a n-type Si substrate deposited on a metal sample holder via an Ag paste, while the probe tip is made of antimony doped Si coated with Pt-Ir. By changing the bias voltage applied between metal sample holder and probe tip from 0 V to 10 V, the electrical resistance of the GST layer exhibits three distinct states, namely amorphous OFF state, amorphous ON state, and crystalline state, thus indicating three storage levels (e.g., ‘0’, ‘1’, ‘2’).…”
Section: Current Status Of Phase-change Electrical Probe Memorymentioning
confidence: 99%
“…( b ) the corresponding resistance of the amorphous OFF state, amorphous ON state and crystalline state. Reproduced with permission from [ 52 ]. Copyright Iop Science, 2015.…”
Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects.
“…15 is reported to be thermodynamically stable at the temperature below 550 °C, demonstrating its long retention time at archival temperature [ 89 ]. Meanwhile, the ability to achieve multi-level recording using phase-change probe memory was also demonstrated recently [ 111 ]. It was found that the resistance of the GST thin film can be toggled among three different states (high, intermediate, and low resistances) by carefully controlling the voltage between the conductive probe and the GST layer, as shown in Fig.…”
Section: Reviewmentioning
confidence: 99%
“…16 a Current-voltage spectrum of amorphous GST thin film measured in the range of 0–10 V with C-AFM; b the corresponding resistance of the amorphous OFF state, amorphous ON state, and crystalline state. Reprinted with permission from [ 111 ] Fig. 17 a Topography ( left sub-panel ) and SthM ( right sub-panel ) images with 10 μm and b 8 μm scan sizes, revealing a crystalline line written into 200 nm GT and GST amorphous thin films by a focused laser beam.…”
Section: Reviewmentioning
confidence: 99%
“… a Current-voltage spectrum of amorphous GST thin film measured in the range of 0–10 V with C-AFM; b the corresponding resistance of the amorphous OFF state, amorphous ON state, and crystalline state. Reprinted with permission from [ 111 ] …”
The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.
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