Design of electrical probe memory with TiN capping layer

Wang, Lei; Wen, Jing; Yang, Cihui; Xiong, Bangshu

doi:10.1007/s10853-018-2707-4

Cited by 10 publications

(17 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To prove this, some preliminary studies were performed to assess the role of the layered thickness and electrothermal properties of TiN films on the writing performance of the phase-change electrical probe memory [ 36 ], as shown in Figure 10 .…”

Section: Design Approaches Review Of Phase-change Electrical Probementioning

confidence: 99%

“…Encouraged by Wright’s findings, a parametric approach has most recently been developed by Wang et al to calculate the maximum/minimum temperature at some pre-defined points that would intensely affect the resulting density, energy consumption [ 36 ], and device thermal stability by adjusting the geometrical and electro-thermal properties of the layered architecture including TiN capping, GST media, and TiN bottom electrode. The optimized trilayer stack is therefore established to be a 2 nm GST layer sandwiched by a 2 nm TiN capping with an electrical conductivity of 2 × 10 5 Ω −1 ⋅m −1 and a thermal conductivity of 12 W⋅m −1 ⋅K −1 , and a 40 nm TiN bottom electrode with an electrical conductivity of 2 × 10 6 Ω −1 ⋅m −1 and a thermal conductivity of 12 W⋅m −1 ⋅K −1 , deposited on Si substrate, giving rise to a cylindrical crystalline bit by a 5 V pulse of 180 ns, and a semi-elliptical amorphous bit by a 6.5 V pulse of 200 ns, as shown in Figure 21 .…”

Section: Current Status Of Phase-change Electrical Probe Memorymentioning

confidence: 99%

“…The investigated electrical conductivity range of the TiN capping layer is bounded by two red lines, while the resulting optimized regions are encompassed by the violet dashes. Reprinted with permission from [ 36 ]. Copyright Springer, 2018.…”

Section: Figurementioning

confidence: 99%

“… Maximum temperature (°C) as a function of the thickness of the TiN bottom layer during both crystallization and amorphization processes. Reproduced with permission from [ 36 ]. Copyright Springer, 2018.…”

Section: Figurementioning

confidence: 99%

“… The 3D view of the resulting bits in ( a ) crystalline and ( b ) amorphous states. Reproduced with permission from [ 36 ]. Copyright Springer, 2018.…”

Section: Figurementioning

confidence: 99%

See 4 more Smart Citations

Overview of Phase-Change Electrical Probe Memory

Wang

Ren²,

Wen

et al. 2018

Nanomaterials

Self Cite

View full text Add to dashboard Cite

Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects.

show abstract

Section: Design Approaches Review Of Phase-change Electrical Probementioning

confidence: 99%

Section: Current Status Of Phase-change Electrical Probe Memorymentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

“… The 3D view of the resulting bits in ( a ) crystalline and ( b ) amorphous states. Reproduced with permission from [ 36 ]. Copyright Springer, 2018.…”

Section: Figurementioning

confidence: 99%

See 3 more Smart Citations

Overview of Phase-Change Electrical Probe Memory

Wang

Ren²,

Wen

et al. 2018

Nanomaterials

Self Cite

View full text Add to dashboard Cite

show abstract

Photonic Integrated Circuit for Rapidly Tunable Orbital Angular Momentum Generation Using Sb₂Se₃ Ultra‐Low‐Loss Phase Change Material

Alam

Gnawali

Hendrickson

et al. 2022

Advanced Optical Materials

View full text Add to dashboard Cite

The generation of rapidly tunable optical vortex (OV) beams is one of the most demanding research areas of the present era as they possess orbital angular momentum (OAM) with additional degrees of freedom that can be exploited to enhance signal‐carrying capacity by using mode division multiplexing and information encoding in optical communication. Particularly, rapidly tunable OAM devices at a fixed wavelength in the telecom band stir extensive interest among researchers for both classical and quantum applications. This article demonstrates the realistic design of a Si‐integrated photonic device for rapidly tunable OAM wave generation at a 1550‐nm wavelength by using an ultra‐low‐loss phase change material (PCM) embedded with a Si‐ring resonator with angular gratings. Different OAM modes are achieved by tuning the effective refractive index using rapid electrical switching of Sb2Se3 film from amorphous to crystalline states and vice versa. The generation of OAM waves relies on a traveling wave modulation of the refractive index of the micro‐ring, which breaks the degeneracy of oppositely oriented whispering gallery modes. The proposed device is capable of producing rapidly tunable OV beams, carrying different OAM modes by using electrically controllable switching of ultra‐low‐loss PCM Sb2Se3.

show abstract

Pressure Engineering Promising Transparent Oxides with Large Conductivity Enhancement and Strong Thermal Stability

Liu

Zhang

et al. 2022

Advanced Science

View full text Add to dashboard Cite

Transparent conducting oxides (TCO) with high electrical conductivity and high visible light transparency are desired for a wide range of high-impact engineering. Yet, usually, a compromise must be made between conductivity and transparency, limiting the practical application of a TCO to the next level. Furthermore, TCO performance is highly sensitive to composition, so conventional synthesis methods, such as chemical doping, cannot unravel the mysteries of the quantitative structure-performance relationship. Thus, improving the fundamental understanding or creating materials-by-design has limited success. Here, a strategy is proposed to modulate the lattice and electronic and optical properties precisely by applying pressure on a TCO. Strikingly, after compression-decompression treatment on the indium titanium oxides (ITiO), a highly transparent and metastable phase with two orders of magnitude enhancement in conductivity is synthesized from an irreversible phase transition. Moreover, this phase possesses previously unattainable filter efficiency on hazardous blue light up to 600 °C, providing potential for healthcare-related applications with strong thermal stability up to 200 °C. These results demonstrate that pressure engineering is a clean and effective tool for tailoring functional materials that are not achievable by other means, providing an exciting alternative property-tuning dimension in materials science.

show abstract

Design of electrical probe memory with TiN capping layer

Cited by 10 publications

References 20 publications

Overview of Phase-Change Electrical Probe Memory

Overview of Phase-Change Electrical Probe Memory

Photonic Integrated Circuit for Rapidly Tunable Orbital Angular Momentum Generation Using Sb₂Se₃ Ultra‐Low‐Loss Phase Change Material

Pressure Engineering Promising Transparent Oxides with Large Conductivity Enhancement and Strong Thermal Stability

Contact Info

Product

Resources

About

Design of electrical probe memory with TiN capping layer

Cited by 10 publications

References 20 publications

Overview of Phase-Change Electrical Probe Memory

Overview of Phase-Change Electrical Probe Memory

Photonic Integrated Circuit for Rapidly Tunable Orbital Angular Momentum Generation Using Sb2Se3 Ultra‐Low‐Loss Phase Change Material

Pressure Engineering Promising Transparent Oxides with Large Conductivity Enhancement and Strong Thermal Stability

Contact Info

Product

Resources

About

Photonic Integrated Circuit for Rapidly Tunable Orbital Angular Momentum Generation Using Sb₂Se₃ Ultra‐Low‐Loss Phase Change Material