Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies

Alamo, J.A. del

doi:10.1109/esscirc.2013.6649061

Cited by 4 publications

(3 citation statements)

References 26 publications

(15 reference statements)

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“…21 Mature HEMT technology intrinsically suffers from high gate leakage and is thus not the best option for highly scaled devices such as MOSFETs. 22 However, it has acted as an excellent model system in demonstrating the superior properties of III-Vs and thus has helped to push the development of III-V CMOS technology. Figure 2 shows the remarkable recent progress achieved for InGaAs MOSFETs (with the InAs composition anywhere between 0 and 1) by contrasting it with the relatively well-established InGaAs HEMTs.…”

Section: N-type Ingaas Mosfetsmentioning

confidence: 99%

III–V compound semiconductor transistors—from planar to nanowire structures

et al. 2014

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Section: N-type Ingaas Mosfetsmentioning

confidence: 99%

III–V compound semiconductor transistors—from planar to nanowire structures

et al. 2014

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“…e ternary compound of InGaAs requires special accent, as it has remarkable electron transport characteristics. Depending on strain and composition, electron mobility of InGaAs varies between 6,000 and 30,000 cm 2 /Vs at room temperature [29]. is makes InGaAs outstanding for highspeed transistor applications (signal amplification at frequencies of ∼500 GHz up to THz-es) in the so called High-Electron Mobility Transistors (HEMTs)-the HEMT was firstly demonstrated by Mimura et al from Fujitsu in 1980 [30]; another type of HEMTs are based on the binary compound of GaN.…”

Section: High Carrier Mobility Devicesmentioning

confidence: 99%

Technology and Modeling of Nonclassical Transistor Devices

Angelov

Nikolov

Hristov

2019

Journal of Electrical and Computer Engineering

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This paper presents a comprehensive outlook for the current technology status and the prospective upcoming advancements. VLSI scaling trends and technology advancements in the context of sub-10-nm technologies are reviewed as well as the associated device modeling approaches and compact models of transistor structures are considered. As technology goes into the nanometer regime, semiconductor devices are confronting numerous short-channel effects. Bulk CMOS technology is developing and innovating to overcome these constraints by introduction of (i) new technologies and new materials and (ii) new transistor architectures. Technology boosters such as high-k/metal-gate technologies, ultra-thin-body SOI, Ge-on-insulator (GOI), AIII–BV semiconductors, and band-engineered transistor (SiGe or Strained Si-channel) with high-carrier-mobility channels are examined. Nonclassical device structures such as novel multiple-gate transistor structures including multiple-gate field-effect transistors, FD-SOI MOSFETs, CNTFETs, and SETs are examined as possible successors of conventional CMOS devices and FinFETs. Special attention is devoted to gate-all-around FETs and, respectively, nanowire and nanosheet FETs as forthcoming mainstream replacements of FinFET. In view of that, compact modeling of bulk CMOS transistors and multiple-gate transistors are considered as well as BSIM and PSP multiple-gate models, FD-SOI MOSFETs, CNTFET, and SET modeling are reviewed.

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“…[8] review a design principles, experimental efforts, and intermediate results, in the development of nm and THz electron devices, including planar MOSFETs and FinFETs for VLSI, wireless communications and imaging. Alamo [9] has reviewed the progress and challenges of InGaAs based FET technology for THz and CMOS. Some applications of terahertz technology are imaging, space exploration, covert communications, compact radar, terahertz microscopy, terahertz tomography and medicine [10].…”

Section: Introductionmentioning

confidence: 99%