NanoCell Electronic Memories

Abstract

NanoCells are disordered arrays of metallic islands that are interlinked with molecules between micrometer-sized metallic input/output leads. In the past, simulations had been conducted showing that the NanoCells may function as both memory and logic devices that are programmable postfabrication. Reported here is the first assembly of a NanoCell with disordered arrays of molecules and Au islands. The assembled NanoCells exhibit reproducible switching behavior and two types of memory effects at room temperature. The switch-type memory is characteristic of a destructive read, while the conductivity-type memory features a nondestructive read. Both types of memory effects are stable for more than a week at room temperature, and bit level ratios (0:1) of the conductivity-type memory have been observed to be as high as 10(4):1 and reaching 10(6):1 upon ozone treatment, which likely destroys extraneous leakage pathways. Both molecular electronic and nanofilamentary metal switching mechanisms have been considered, though the evidence points more strongly toward the latter. The approach here demonstrates the efficacy of a disordered nanoscale array for high-yielding switching and memory while mitigating the arduous task of nanoscale patterning.

Nonphotolithographic Nanoscale Memory Density Prospects

“…Due to error correction (Appendix V-B), the number of corrected data bits on a column is . Substituting the yielded row wires and net column data payload into the bank area from (4), we get the effective net bit area for useful data bits (30) To illustrate the entire net bit area calculation, consider the calculation for:…”

“…Tour et al demonstrate that mononitro oligo(phenylene ethynylene) molecules bridging discontinuous gold islands and gold nanorods also exhibit hysteretic switching with off/on resistance ratios separated by up to four orders of magnitude [30] at room temperature. These are set at 8 V and can be read from the 0-to 2-V range.…”

“…These are set at 8 V and can be read from the 0-to 2-V range. Metal nanofilament and molecular electronic effects have been hypothesized as mechanisms for the voltage controllable resistances, with more recent evidence pointing toward filamentary metal effects [30].…”

Estudo ab initio de fulerenos menores e C IND.60 e seus derivados para aplicações em eletrônica molecular

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