Nano ZnO thin films synthesis by sol–gel spin coating method as a transparent layer for solar cell applications

Farrag, A.A.; Balboul, M.R.

doi:10.1007/s10971-016-4277-8

Cited by 59 publications

(14 citation statements)

References 31 publications

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“…Например, золь-гель технологии [6,7,8], спрей-пиролиз [9], лазерное импульсное осаждение [10], магнетронное распыление на переменном токе [11] и другие. Трехвалентный ион алюминия Al 3+ при замещении двухвалентного цинка Zn 2+ в кристаллической решетке ZnO будет вести себя как донорная примесь, что широко используется для изготовления прозрачных высокопроводящих слоев ZnO в прозрачной электронике [11] и солнечной энергетике [12]. Влияние примесных атомов на свойства ZnO зависит не только от структуры их электронных оболочек, но и от предельной растворимости и места локализации примесей в кристаллической решетке ZnO.…”

Section: Introductionunclassified

Influence of Al impurities on the electrical properties of ZnO films

et al. 2019

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The paper presents the results of studies of the structure, electrical and optical properties of ZnO films with Al content from 1 to 5 at.% obtained by the method of ion-beam sputtering of a composite ceramic target in an argon atmosphere. The composite target is a rectangular ZnO ceramic plate with several bands of Al 2 O 3 corundum unevenly distributed over the ZnO surface. In one sputtering cycle, 10 samples were obtained with an aluminum concentration of 1 to 5 at.% as the results of the analysis of the energy dispersion of the second electrons. After deposition, ZnO films were partially crystallized and contained one phase of hexagonal wurtzite with increased parameters a and c. The grain size of the films was estimated using the Scherrer equation and showed a tendency for the grain sizes to change with increasing Al concentration in ZnO films. X-ray diffraction data were confirmed by studying the surface morphology using atomic force microscopy. Measurement of the electrical parameters of the films showed that the smallest resistivity (~ 4 ·10 −3 Ohm · cm) is observed in ZnO films with 1 at.% Al. As the Al concentration in ZnO increases, the resistivity of the films increases, reaching the value ρ = 250 Ohm · cm at 5 at.% Al. A possible model of the effect of Al impurity on the electrical properties of ZnO films is considered. Studies of the optical properties of the samples showed that all films are highly transparent (~ 70 ÷ 90%) in the visible light range. The interference bandwidths provide an estimate of the value of the refractive index of ZnO : Al films. From the light absorption spectra, the values of the band gap of ZnO : Al samples were determined and a slight increase in the band gap of ZnO : Al with an increase in the Al concentration in films was established. The mechanism of this behavior of Al impurity in ZnO is discussed. Possible areas of application for ZnO films with Al impurities are considered.1 Воронежский государственный технический университет, ул. 20-летия Октября, 84, Воронеж, 394006, Россия 2 Воронежский государственный университет, Университетская пл., 1, Воронеж, 394018, Россия В работе представлены результаты исследований структуры, электрических и оптических свойств пленок ZnO с содержанием Al от 1 до 5 ат.%, полученных методом ионно-лучевого распыления составной керамической мишени в атмосфере аргона. Составная мишень представляет собой прямоугольную керамическую пластину ZnO с несколькими полосами корунда Al 2 O 3 , неравномерно распределенными на поверхности ZnO. За один цикл напыления были получены 10 образцов с концентрацией алюминия от 1 до 5 ат.% по данным энергодисперсионного анализа вторичных электронов. Сразу после напыления пленки ZnO были частично кристаллизованы и содержат одну фазу гексагонального вюрцита с увеличенными параметрами а и с. Размер зерна пленок оценивался по формуле Шеррера и показал тенденцию к изменению размеров зерен по мере увеличения концентрации Al в пленках ZnO. Данные

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Section: Introductionunclassified

Influence of Al impurities on the electrical properties of ZnO films

et al. 2019

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“…The transmittance of the 200 nm thin ZnO layer on the substrate T ZnO shows a single steep absorption edge at λ ≈ 380 nm with a direct optical band gap at E BG = 3.26 eV [ 20 , 27 ], determined by a Tauc-plot [ 28 ]: αE P = G · (E P − E BG ) R , where G is a constant that depends on the transition probability. The parameter R is determined by the optical transmittance type and is R = 0.5 for directly allowed optical transmissions [ 29 , 30 ]. Plotting αE P over E P and using a linear fit of the straight portion of the absorption edge, the intersection at αE P = 0 determines E BG ( Figure 2 b).…”

Section: Resultsmentioning

confidence: 99%

Dual Laser Beam Processing of Semiconducting Thin Films by Excited State Absorption

et al. 2021

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We present a unique dual laser beam processing approach based on excited state absorption by structuring 200 nm thin zinc oxide films sputtered on fused silica substrates. The combination of two pulsed nanosecond-laser beams with different photon energies—one below and one above the zinc oxide band gap energy—allows for a precise, efficient, and homogeneous ablation of the films without substrate damage. Based on structuring experiments in dependence on laser wavelength, pulse fluence, and pulse delay of both laser beams, a detailed concept of energy transfer and excitation processes during irradiation was developed. It provides a comprehensive understanding of the thermal and electronic processes during ablation. To quantify the efficiency improvements of the dual-beam process compared to single-beam ablation, a simple efficiency model was developed.

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“…Over the years, various growth method such as sol–gel spin-coating method, metal–organic chemical vapor deposition, molecular beam epitaxy (MBE), pulsed laser deposition, electrodeposition, and hydrothermal method have been used to fabricate the ZnO based UV photodetector. Among them, the deposition of ZnO thin films by using the sol–gel spin-coating method has a variety of advantages, such as simplicity, easy control of the doping level, straightforward solution concentrations, the production of homogeneous films, and feasibility of large-area deposition without the use of expensive and complicated equipment that is required with other methods 9 – 12 . However, despite of these advantages, the deposition of ZnO thin films by using sol–gel spin-coating method has a critical drawback: crystallization of amorphous state ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed

Kim

2021

Sci Rep

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ZnO-based ultraviolet (UV) photodetector can be easily fabricated by using sol–gel spin-coating method, however, the crystallization of amorphous state ZnO thin films is necessary to fabricate high performance UV photodetector. Thus, we devised a thermal dissipation annealing (TDA) method in which the heat transfer to the ZnO thin films can be synchronized with the heat release from the substrate. It was found that sol–gel spin-coated ZnO thin films can be crystallized through the mobility difference of ZnO molecules placed at the surface of ZnO thin films. Also, UV photodetector based on ZnO thin films annealed with the TDA method exhibited faster rise and decay time constant (τr = 35 ms and τd = 73 ms, respectively), a higher on/off current ratio, and reproducible photocurrent characteristics compared to that of the ZnO thin films annealed by using furnace and IR lamp. Therefore, these results indicated that the TDA method is a feasible alternative route for the fabrication of ZnO based high performance optoelectronic devices.

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Nano ZnO thin films synthesis by sol–gel spin coating method as a transparent layer for solar cell applications

Cited by 59 publications

References 31 publications

Influence of Al impurities on the electrical properties of ZnO films

Influence of Al impurities on the electrical properties of ZnO films

Dual Laser Beam Processing of Semiconducting Thin Films by Excited State Absorption

Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed

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