Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

“…However, they were revealed with RBS via an extra scattering peak (located at 500-900 nm depth) that followed the main peak (due to scattering from the extended radiation defects) found in the sub-surface (down to 500 nm) region [10]. These quasi-point defects can be also revealed with high-resolution TEM [12].…”

“…After ion implantation, the dominant contribution to the conductivity belong to low-mobility (μ nh2 ∼5000-7000 cm 2 V −1 s −1 ) electrons (figure 3, curve 1) with concentration peaking at ∼10 18 cm -3 . These electrons appear to be located within the profile of implanted arsenic ions (see figure 2), which is also the layer that contains extended radiation defects, such as dislocation loops [11,12,22] typical of implanted MCT [7][8][9][10]. A similar defect pattern was observed also in ion-milled MCT [27], where the appearance of the damaged n + -layer was due to the formation of dislocation loops with electron conductivity in this layer originating from donor defects formed as a result of the loops capturing Hg I atoms.…”

“…Defects in the implanted material are commonly studied with the use of electron microscopy, Rutherford backscattering (RBS), optical measurements, etc. (see, for example, [9][10][11][12]), but of special importance are electrical measurements. Their results not only provide information on electronic transport, but also help to understand the nature and distribution of electrically active defects induced by implantation.…”

Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

“…This was indicative of the annihilation of the most part of defects that had captured Hg I . Figure 4 shows the results of BF-TEM studies of sample F2 and reveals the characteristic patterns of the implantationinduced defects (for a typical defect pattern in an as-grown MCT film fabricated with the MBE technology used see [22]). Namely, in the as-implanted film (figure 4(a)) a top thin (45-50 nm) layer A had low concentration of defects.…”

Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride

“…The next, sub-surface, layer (d ∼120 nm), contains large extended defects with high density, and the deep defect layer (d ∼80 nm), smaller defects with moderate density. TEM studies in high-resolution mode performed on similar samples allowed for identifying dominant defects as dislocations, defect clusters, stacking faults and nano-twins (top layer), large-size dislocation loops (middle layer), and smaller-size dislocation loops (lower layer) [7].…”