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The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high-energy electrons (18 MeV) has been performed by methods of the highresolution X-ray diffraction. The concentrations and average sizes of dislocation loops and oxygen precipitates have been determined by using the combined treatment of reciprocal space maps and rocking curves based on the analytical formulas of the statistical dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed microdefects of several types.

A comparison is made between the codeposition behavior of Zn with SiC nanoparticles (NPs) of two average sizes: 56 nm and 90 nm. The SiC NPs are first characterized using transmission electron microscopy (TEM) and X-ray diffraction (XRD). Dynamic light scattering (DLS) is used to compare the surface charge of both kinds of SiC NPs suspended in aqueous citrate electrolytes. The effect of applied current density, hydrodynamic conditions, and total charge passed on the SiC content in the coating and electrodeposition rate is studied. The electrodeposited Zn-SiC coatings are characterized by wavelength dispersive X-ray fluorescence (WDXRF), scanning electron microscopy (SEM), and XRD. The results obtained confirm that Cit-Zn complexes are adsorbed on the surface of the SiC NPs, which are transported to the cathode and are codeposited with Zn during reduction. Zn-SiC incorporation may proceed also by mechanical entrapment of SiC agglomerates in the cavities and pores that are formed in the deposit under condition of relatively fast Zn deposition, which is accompanied by fast hydrogen evolution.