Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride

Іжнін, І. І.; Fitsych, O. I.; Świątek, Z.; Morgiel, Y.; Bonchyk, O. Yu.; Savytskyy, H. V.; Mynbaev, K. D.; Войцеховский, А. В.; Korotaev, A. G.; Yakushev, M. V.; Marin, D. V.; Варавин, В. С.; Dvoretsky, S. A.

doi:10.1016/j.opelre.2019.01.002

Cited by 2 publications

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References 11 publications

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“…The studies on the structure changes of the graded-gap MCT epilayers after ion implantation and annealing were reported [3,4]. Furthermore, the influence of post-annealing on the re-structuring of arsenic-implanted (at a low implant energy of <200 keV) MCT epilayer coated with in-situ graded-gap layer by molecular beam epitaxy (MBE) was investigated [5]. With the development of passivation technique, the film deposition method, such as atomic layer deposition (ALD), was utilized to prepare passivation layer (Al2O3) on uneven MCT device surface.…”

Section: Introductionmentioning

confidence: 99%

Diffusion of Dopants and Components in Arsenic-Implanted CdTe/HgCdTe Structures under Different High-Temperature Annealing Conditions

Shi¹,

Lin²,

Wei³

2019

The 15th International Workshop on Advanced Infrared Technology and Applications

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The CdTe cap layers were grown on CdZnTe-substrated HgCdTe (MCT) LPE epilayers by magnetron sputtering and thermal evaporation. The diffusion behaviors of Cd & Hg components and impurities (As or In) in these CdTe/MCT structures subjected to As ion implantation and various Hg overpressure annealing processes were investigated. The conclusions indicate that the defects at the CdTe/MCT interface could produce the accumulations of impurities and the distributions of induced damages (related to the cap layer structure) have a significant influence on the diffusion of components and impurities. By adjusting annealing procedures, the diffusions of components and impurities can be controlled.

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Section: Introductionmentioning

confidence: 99%