n‐ZnO/i‐InGaN/p‐GaN heterostructure for solar cell application

Abstract

Phone: þ82 62 715 2248, Fax: þ82 62 715 2204, Web: http://ssll.gist.ac.krWe report hybrid n-ZnO/i-InGaN/p-GaN solar cells in which the n-GaN layer of n-GaN/i-InGaN/p-GaN solar cell was replaced with n-type ZnO. In this study, inverted structures were used for hybrid ZnO/nitride solar cells where p-type GaN was first grown on sapphire substrate, followed by i-InGaN and n-ZnO layers. The as-fabricated device showed high series resistance and low energy conversion efficiency due to the formation of damaged p-GaN region during dry etching. On the other hand, formation of microrods on the p-GaN eased the removal of the damaged p-GaN resulting in significantly lowered series resistance and enhanced energy conversion efficiency.(a) n-ZnO/i-InGaN/p-GaN solar cell structure without microrods, (b) n-ZnO/i-InGaN/p-GaN solar cell structure with microrods, and (c) magnified image of the dashed box on (b).

Zinc Oxide Nanoparticles—Solution-Based Synthesis and Characterizations

“…The small change in transmission in the visible range of the spectrum may be due to the slightly different thicknesses of the films. As shown in Figure 4B, in the visible range of spectrum, all films present a high average transmittance greater than 60%, indicating low absorbance and low reflectance, which confirms that these ZnO thin films can be used as antireflection coating in solar cells working mainly in the visible region, such as silicon solar cells [31,100]; in a large spectrum, such as GaN-based concentration solar cells [101]; or as a window layer in quantum dots solar cells [74].…”