InGaN-based solar cells: a wide solar spectrum harvesting technology for twenty-first century

Routray, Soumyaranjan; Lenka, Trupti Ranjan

doi:10.1007/s40012-017-0181-9

Cited by 23 publications

(5 citation statements)

References 108 publications

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“…Finally, achievable conversion efficiency (η) of CSS-NW structure is increased by more than 0.5-fold and 2.5-fold, compared to ND and planar type solar cells respectively. More analysis on different types of CSS nanowire is also studied and can found in [34][35][36].…”

Section: Planar Nanodisk and Nanowire Iii-nitride Solar Cellsmentioning

confidence: 99%

III-Nitride Nanowires: Future Prospective for Photovoltaic Applications

Routray¹,

Lenka²

2021

Nanowires - Recent Progress

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Photovoltaic (PV) technology could be a promising candidate for clean and green source of energy. The nanowire technology provides extra mileage over planar solar cells in every step from photon absorption to current generation. Indium Gallium Nitride (InxGa1-xN) is a recently revised material with such a bandgap to absorb nearly whole solar spectrum to increase the conversion efficiency copiously. One of the major technological challenge is in-built polarization charges. This chapter highlights the basic advantageous properties of InxGa 1−xN materials, its growth technology and state-of-the-art application towards PV devices. The most important challenges that remain in realizing a high-efficiency InxGa 1−xN PV device are also discussed. III-Nitride nanowires are also explored in detail to overcome the challenges. Finally, conclusions are drawn about the potential and future aspect of InxGa 1−xN material based nanowires towards terrestrial as well as space photovoltaic applications.

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Section: Planar Nanodisk and Nanowire Iii-nitride Solar Cellsmentioning

confidence: 99%

III-Nitride Nanowires: Future Prospective for Photovoltaic Applications

Routray¹,

Lenka²

2021

Nanowires - Recent Progress

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“…9,10 However, the modification of E g is also beneficial for the progress of photovoltaic devices, allowing the absorption spectrum of the InGaN active layer to be adjusted with respect to the electromagnetic radiation of the sun. 11 This feature can be applied to develop solar cells to take advantage of the wavelengths emitted by the sun, leading to an increase in the efficiency of the photovoltaic device, an objective that is still present to this day. 12 However, in the specific case of photovoltaic systems, there are two main challenges that are directly related to the limitation of the efficiency parameter of solar cells based on the InGaN alloy: phase miscibility and a high recombination rate.…”

Section: ■ Introductionmentioning

confidence: 99%

“…InGaN has been reported to be an active layer in light-emitting diodes (LEDs) over the past few decades, resulting in the implementation of high-performance lighting systems with a longer useful life and lower energy consumption. , However, the modification of E g is also beneficial for the progress of photovoltaic devices, allowing the absorption spectrum of the InGaN active layer to be adjusted with respect to the electromagnetic radiation of the sun . This feature can be applied to develop solar cells to take advantage of the wavelengths emitted by the sun, leading to an increase in the efficiency of the photovoltaic device, an objective that is still present to this day …”

Section: Introductionmentioning

confidence: 99%

Use of Gold Nanoparticles in Indium Gallium Nitride Growth for Improving the Photoactive Electrical Performance of p–n Junctions

Valenzuela-Hernandez,

Rangel,

García

et al. 2024

ACS Appl. Electron. Mater.

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In this report, the results of indium gallium nitride (InGaN) grown by chemical vapor deposition (CVD) on a sapphire substrate covered by gold nanoparticles (AuNPs) are discussed. AuNPs were formed by solid-state dewetting from a thin gold film. The samples on AuNPs were compared with a series of InGaN films grown with the two-step method. X-ray diffraction (XRD) and Raman spectroscopy expose higher indium incorporation in InGaN on AuNPs than in films grown by the two-step method. The effect of AuNPs on the surface morphology and compactivity of InGaN films was studied by scanning electron microscopy (SEM). An energy reduction of the absorption band edge was evidenced by UV−vis spectroscopy diffuse reflectance (DFR) and absorbance. Photoluminescence (PL) and cathodoluminescence (CL) revealed a passivation in the intensity of the near-band emission (NBE) in the InGaN/ AuNPs films. An increase in the density current of 127−182 μA/cm 2 in the goldnucleated InGaN-based p−n junction was obtained by the induced localized surface plasmon resonance (LSRP) effect and the enhancement of InGaN phase stability. The implementation of AuNP-covered substrates in the growth of group III nitrides can be an alternative for improving InGaN phase miscibility and imparting suitable properties for photovoltaics applications aiming to achieve high-efficiency InGaN-based solar cells.

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“…Additionally, these materials have direct band gaps (Kazazis et al, 2018) which creates strong optical transitions for charge carriers between the conduction band (CB) and valence band (VB). Also, they have a tunable band gap, which covers almost the whole range of the visible solar spectrum from UV up to infrared (Bhuiyan et al, 2012;David and Grundmann, 2010;Routray and Lenka, 2018;Belghouthi and Aillerie, 2019;Cheriton et al, 2020). Several groups have reported that modeling efforts aimed at describing the solar cell parameters of devices made from InGaN alloys.…”

Section: Introductionmentioning

confidence: 99%

Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features

Sarollahi

Zamani-Alavijeh²,

Aldawsari³

et al. 2022

Front. Mater.

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The temperature dependence of Λ-graded InGaN solar cells is studied through simulation using nextnano software. Λ-Graded structures have been designed by increasing and then decreasing the indium composition in epitaxial InGaN layers. Due to polarization doping, layers of p-type and n-type doping arise without the need for impurity doping. Different individual structures are designed by varying the indium alloy profile from GaN to maximum indium concentrations, xmax, ranging from 20% to 90% pseudomorphically strained to a GaN substrate and from 20% to 100% for completely strain-relaxed materials and linearly decreases back to GaN. For InxGa1-xN with x>∼0.9, if the material is strained to the GaN lattice constant, it is predicted to have a negative band gap. So this case is not considered here. The temperature dependence of the electrical and optical properties as they relate to the solar efficiency of the Λ-graded structures under relaxed and strained conditions are studied. Additionally, the dimensionless absorption coefficients are fitted and plotted as functions of the band gap under both strained and relaxed conditions at different temperatures. As a result, the generation rates as functions of the penetration depth within a cell can be calculated in order to obtain the solar cell parameters including efficiency for each Λ-graded structure at different temperatures. Under the strained condition, the xmax, where the solar cell efficiency reaches its maximum for each temperature, decreases as the temperature increases. At the same time, under the relaxed condition, at low temperatures (T = 100–400 K), xmax is 100%, that is, grading to InN results in maximum efficiency, while at higher temperatures (T = 500–800 K), xmax decreases with the increasing temperature.

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InGaN-based solar cells: a wide solar spectrum harvesting technology for twenty-first century

Cited by 23 publications

References 108 publications

III-Nitride Nanowires: Future Prospective for Photovoltaic Applications

III-Nitride Nanowires: Future Prospective for Photovoltaic Applications

Use of Gold Nanoparticles in Indium Gallium Nitride Growth for Improving the Photoactive Electrical Performance of p–n Junctions

Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features

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