Multiscale structure and band configuration tuning to achieve high thermoelectric properties in n-type PbS bulks

PbmBi2S3+m Homologous Series with Low Thermal Conductivity Prepared by the Solution-Based Method as Promising Thermoelectric Materials

“…11 For example, AgPb m SbTe 2+m exhibited a maximum zT of ∼2.2 at 800 K. 12 The ternary homologous have Pb−Bi−S a general chemical formula (PbS) m (Bi 2 S 3 ) n or Pb m Bi 2n S m+3n , which contains building blocks from the binary phases PbS and Bi 2 S 3 . Previous studies in the literature indicate that PbS 13 and Bi 2 S 3 14 achieve moderate thermoelectric performance with a maximum zT of ∼1. K and ∼0.8 at 673 K, respectively, by introducing a multiscale structure.…”

“…The ternary homologous have Pb–Bi–S a general chemical formula (PbS) m (Bi 2 S 3 ) n or Pb m Bi 2 n S m +3 n , which contains building blocks from the binary phases PbS and Bi 2 S 3 . Previous studies in the literature indicate that PbS and Bi 2 S 3 achieve moderate thermoelectric performance with a maximum zT of ∼1.0 at 823 K and ∼0.8 at 673 K, respectively, by introducing a multiscale structure. Ohta et al studied the thermoelectric properties of PbBi 2 S 4 ( m = 1, n = 1) and Pb 3 Bi 2 S 6 ( m = 3, n = 1) synthesized by the solid-state reaction of the binary precursors PbS and Bi 2 S 3 , and the results indicated that both exhibited an extremely low thermal conductivity of less than 1.0 W·K –1 ·m –1 in the temperature range of 300–800 K. However, the high-temperature solid-state reaction is not an optimal method to synthesize homologous materials because there is a great deal of difference between/among the melting points of structural units, such as ∼1050 K for Bi 2 S 3 and ∼1390 K for PbS.…”

High Power Factor and Thermoelectric Figure of Merit in Sb2Si2Te6 through Synergetic Effect of Ca Doping

“…The energy conversion efficiency for thermoelectric generators is determined by thermoelectric materials’ dimensionless figure of merit, ZT = S 2 σT/κ, in which S, σ, κ ,and T are the Seebeck coefficient, the electrical conductivity, the thermal conductivity, and the absolute temperature, respectively. , In order to maximize the conversion efficiency, the realization of high ZT value has been the focus of thermoelectric community, which requires the thermoelectric material to have high powder factor (S 2 σ) and/or low thermal conductivity . In the past decades, various strategies were carried out to pursue high ZT, including enhancing the power factor through carrier concentration − and band structure regulation, − suppressing the thermal conductivity by phonon scattering strengthening, − and exploring new compounds with intrinsically high thermoelectric performance. ,− Among the emerging compounds, layered materials with 2D atomic sheets bonded by weak chemical bonding received great attention due to their intrinsically low thermal conductivity. − …”

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

“…As known, increasing power factor (PF = S 2 /ρ) or/and depressing κ lat can enhance the ZT values. On one hand, one can use those methods to decouple the internal relationships between S and ρ in order to guarantee a high PF value, such as modulation doping [14], band engineering [15][16][17], carrier concentration optimization [18][19][20], carrier blocking [21] and energy ltering effect [22]; On the other hand, to obtain a low κ lat , one can select materials with intrinsically low κ lat [23][24][25], or strengthen phonon scattering to suppress phonon transports by nanostructure engineering [26][27][28], alloying [29], and allscale hierarchical microstructure construction at atomic-, nano-and meso-scale, including point defects [30], dislocations [31], precipitates and boundaries [32,33]. However, PF is usually along with high κ on account of the interrelated relationship among the S, ρ and κ ele , which makes the optimization of TE properties and development of high-performance TE materials quite challenging [13].…”